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Key Documents

342890

Sigma-Aldrich

Silicon dioxide

−325 mesh, 99.5% trace metals basis

Synonym(s):

Cristobalite, Quartz, Sand, Silica

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About This Item

Linear Formula:
SiO2
CAS Number:
Molecular Weight:
60.08
EC Number:
MDL number:
UNSPSC Code:
12352303
PubChem Substance ID:
NACRES:
NA.23

Assay

99.5% trace metals basis

form

powder

refractive index

n20/D 1.544 (lit.)

particle size

−325 mesh

mp

1610 °C (lit.)

density

2.6 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

SMILES string

O=[Si]=O

InChI

1S/O2Si/c1-3-2

InChI key

VYPSYNLAJGMNEJ-UHFFFAOYSA-N

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Application

SiO2 is majorly used as a substrate material with excellent thermo-mechanical properties which can be used in a variety of applications which include: vapor deposition, phase deposition, atomic force microscopy probes(AFM), spin coating, electronic based devices.

Other Notes

May contain adsorbed H2O and CO2 which is removable by calcining at >900°C

Storage Class Code

13 - Non Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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The effect of calcination temperature on the surface microstructure and photocatalytic activity of TiO2 thin films prepared by liquid phase deposition.
Yu J, et al.
The Journal of Physical Chemistry B, 107(50), 13871-13879 (2003)
Exciton diffusion measurements in poly (3-hexylthiophene).
Shaw PE, et al.
Advanced Materials, 20(18), 3516-3520 (2008)
Electrical and optical properties of ZnO transparent conducting films by the sol-gel method.
Lee J, et al.
Journal of Crystal Growth, 247(1-2), 119-125 (2003)
Growth model of bamboo-shaped carbon nanotubes by thermal chemical vapor deposition.
Lee CJ and Park J
Applied Physics Letters, 77(21), 3397-3399 (2000)
Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates.
Chen J, et al.
Journal of the American Chemical Society, 133(44), 17548-17551 (2011)

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