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Merck

702854

Sigma-Aldrich

Copper(II) phthalocyanine

triple-sublimed grade, >99.95% trace metals basis

Sinónimos:

CuPc

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About This Item

Fórmula empírica (notación de Hill):
C32H16CuN8
Número de CAS:
Peso molecular:
576.07
Colour Index Number:
74160
Beilstein/REAXYS Number:
4121848
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

Quality Level

assay

>99.95% trace metals basis

form

powder

quality

triple-sublimed grade

mp

350 °C

λmax

678 nm

fluorescence

λem 404 nm

orbital energy

HOMO 5.2 eV 
LUMO 3.5 eV 

OLED device performance

ITO/CuPc/NPD/Alq3/C60/Mg:Ag

  • Color: green
  • Max. Luminance: 17200 Cd/m2

ITO/CuPc/NPD/Alq3/LiF/Al
  • Color: red
  • Max. Luminance: 2000 Cd/m2
  • Turn-On Voltage: 7.5 V

ITO/CuPc/NPD/CBP:Firpic (6%)/BAlq3/LiF/Al
  • Color: blue
  • Max. EQE: 4.5 %

OPV device performance

ITO/CuPc/PTCDA/In

  • Short-circuit current density (Jsc): 53.1 mA/cm2
  • Open-circuit voltage (Voc): 0.57 V
  • Fill Factor (FF): 0.61
  • Power Conversion Efficiency (PCE): 4.2 %

ITO/PEDOT:PSS/CuPc/C60/BCP/Al
  • Short-circuit current density (Jsc): 18.8 mA/cm2
  • Open-circuit voltage (Voc): 0.58 V
  • Fill Factor (FF): 0.52
  • Power Conversion Efficiency (PCE): 3.6 %

SMILES string

c1ccc2c(c1)C3=NC4=[N@@H]5C(=Nc6n7c(N=C8c9ccccc9C%10=[N@@H]8[Cu]57N3C2=N%10)c%11ccccc6%11)c%12ccccc4%12

InChI

1S/C32H16N8.Cu/c1-2-10-18-17(9-1)25-33-26(18)38-28-21-13-5-6-14-22(21)30(35-28)40-32-24-16-8-7-15-23(24)31(36-32)39-29-20-12-4-3-11-19(20)27(34-29)37-25;/h1-16H;/q-2;+2

InChI key

XCJYREBRNVKWGJ-UHFFFAOYSA-N

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Storage Class

11 - Combustible Solids

wgk_germany

nwg

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)


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Mingyi Zhang et al.
ACS applied materials & interfaces, 3(2), 369-377 (2011-01-12)
In the present work, 2,9,16,23-tetranitrophthalocyanine copper(II) (TNCuPc)/TiO(2) hierarchical nanostructures were successfully fabricated by a simple combination method of electrospinning technique and solvothermal processing. Scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, X-ray diffraction (XRD), UV-vis diffuse reflectance (DR), Fourier transform
Jun Ren et al.
The Journal of chemical physics, 134(19), 194706-194706 (2011-05-24)
We investigate the atomic structure and electronic properties of monolayers of copper phthalocyanines (CuPc) deposited on epitaxial graphene substrate. We focus in particular on hexadecafluorophthalocyanine (F(16)CuPc), using both theoretical and experimental (scanning tunneling microscopy - STM) studies. For the individual
Qiu Hong Cui et al.
Advanced materials (Deerfield Beach, Fla.), 24(17), 2332-2336 (2012-04-11)
Organic/organic single-crystal coaxial p-n heterojunction nanowire arrays consisting of p-type copper phthalocyanine (CuPc) and n-type 5,10,15,20-tetra(4-pyridyl)-porphyrin (H(2)TPyP) are fabricated through a one-step physical vapor transport (PVT) process. Each single junction wire revealed high photodependent rectifying and sensitive photoresponsive characteristics in
Yudong He et al.
Advanced materials (Deerfield Beach, Fla.), 23(46), 5502-5507 (2011-11-08)
2D mica crystals (with thickness < 100 nm) obtained by mechanical exfoliation are incorporated for the first time into the design of organic thin film field-effect transistor arrays and organic single crystal transistors as a gate insulator. The size of
Jaron G Van Dijken et al.
Molecules (Basel, Switzerland), 17(9), 10119-10130 (2012-08-28)
We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than

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Highly reducing or oxidizing species enhance organic semiconductor conductivity by reducing charge-carrier injection barriers.

Highly reducing or oxidizing species enhance organic semiconductor conductivity by reducing charge-carrier injection barriers.

Highly reducing or oxidizing species enhance organic semiconductor conductivity by reducing charge-carrier injection barriers.

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