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277959

Sigma-Aldrich

Indium

powder, 99.99% trace metals basis

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About This Item

Empirical Formula (Hill Notation):
In
CAS Number:
7440-74-6
Molecular Weight:
114.82
EC Number:
231-180-0
MDL number:
MFCD00134048
UNSPSC Code:
12141719
PubChem Substance ID:
24856497
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Assay

99.99% trace metals basis

form

powder

resistivity

8.37 μΩ-cm

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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General description

Indium is a silvery-white soft metal with aface-centered tetragonal crystalline structure. It becomes superconductingat 3.37 K. It improves alloys′ hardness, corrosion resistance, andstrength.

Application

Indium can be used as a:

  • Dopant to tune the electrical and photoelectrical properties of CdSe nanowires.
  • Negative electrode material for Mg-ion batteries.
  • Reducing agent in many organic transformations because of its low first ionization potential.

Pictograms

FlameExclamation mark
GHS02,GHS07

Signal Word

Danger

Hazard Statements

H228,H315,H319,H332,H335

Hazard Classifications

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

4.1B - Flammable solid hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping.
Zhubing He et al.
Small (Weinheim an der Bergstrasse, Germany), 5(3), 345-350 (2008-12-06)
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
J S Fandiño et al.
Optics express, 21(3), 3726-3736 (2013-03-14)
We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the
V M Katerynchuk et al.
Journal of nanoscience and nanotechnology, 12(11), 8856-8859 (2013-02-21)
The photosensitive In2O3-p-InSe heterostructures in which the In2O3 frontal layer has a nanostructured surface were investigated. The photoresponse spectra of such heterostructures are found to be essentially dependent on surface topology of the oxide. The obtained results indicate that the
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