Resistive switching effect in titanium oxides.

Resistive switching effect in titanium oxides.

Journal of nanoscience and nanotechnology (2014-04-23)

Zhensen Tang, Yaqing Chi, Liang Fang, Rulin Liu, Xun Yi

摘要

Resistive switching (RS) phenomena have been vigorously investigated in a large variety of materials and highlighted for its preeminent potential for the future nonvolatile semiconductor memory applications or reconfigurable logic circuits. Among the various resistive switching materials, the binary metal oxides demonstrate more advantageous for micro- or nano-electronics applications due to their simpler fabrication process and compatibility with conventional CMOS technology, though the mechanisms are controversial due to the diversity of RS effects. This review mainly focuses on the current understanding of the microscopic nature of RS in titanium oxides, in which the working mechanisms can be categorized into thermochemical metallization mechanism, valence change mechanism, and electrostatic/electronic mechanism. The approaches developed to investigate the RS and the specific switching processes related to different mechanisms are addressed. Since titanium oxides are oxygen-vacancy doped semiconductors, the role of defects is analyzed in detail and possible effective strategies to improve the performance of RS are addressed.

材料

货号

品牌

产品描述

348791

Sigma-Aldrich

钛, foil, thickness 0.127 mm, 99.7% trace metals basis

366994

Sigma-Aldrich

钛, powder, <45 μm avg. part. size, 99.98% trace metals basis

267503

Sigma-Aldrich

钛, foil, thickness 0.25 mm, 99.7% trace metals basis

268496

Sigma-Aldrich

钛, powder, −100 mesh, 99.7% trace metals basis

460400

Sigma-Aldrich

钛, wire, diam. 0.25 mm, 99.7% trace metals basis

268526

Sigma-Aldrich

钛, sponge, 1-20 mm, 99.5% trace metals basis

GF16031843

钛, mesh, 100x100mm, nominal aperture 0.19mm, wire diameter 0.23mm, 60x60 wires/inch, open area 20%, twill weave

348848

Sigma-Aldrich

钛, foil, thickness 0.025 mm, 99.98% trace metals basis

369489

Sigma-Aldrich

钛, foil, thickness 2.0 mm, 99.7% trace metals basis

GF29374005

钛, mesh, 100x100mm, nominal aperture 4.3mm, wire diameter 1.5mm, 4.4x4.4 wires/inch, open area 94%, platinized diamond mesh

348805

Sigma-Aldrich

钛, foil, thickness 0.5 mm, 99.99% trace metals basis

767506

Sigma-Aldrich

钛, sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.995% trace metals basis

266035

Sigma-Aldrich

钛, wire, diam. 1.0 mm, 99.99% trace metals basis

267481

Sigma-Aldrich

钛, foil, thickness 0.25 mm, 99.99% trace metals basis

460397

Sigma-Aldrich

钛, foil, thickness 0.127 mm, ≥99.99% trace metals basis

305812

Sigma-Aldrich

钛, 5-10 mm, ≥99.99% trace metals basis (purity exclusive of Na and K content)

348864

Sigma-Aldrich

钛, wire, diam. 0.5 mm, 99.99% trace metals basis

GF46592949

钛, wire, straight, 1000mm, diameter 1.0mm, as drawn, 99.6+%

GF31127712

钛, rod, 10mm, diameter 50mm, 99.99+%

GF14990935

钛, tube, 1000mm, outside diameter 10.3mm, inside diameter 8.7mm, wall thickness 0.8mm, annealed, 99.6+%

433667

Sigma-Aldrich

钛, evaporation slug, diam. × L 6.3 mm × 6.3 mm, ≥99.99% trace metals basis

GF62977540

钛, tube, 200mm, outside diameter 2.03mm, inside diameter 1.63mm, wall thickness 0.2mm, annealed, 99.6+%

267902

Sigma-Aldrich

钛, wire, diam. 0.81 mm, 99.7% trace metals basis

GF86399106

钛, tube, 500mm, outside diameter 1.6mm, inside diameter 1.2mm, wall thickness 0.2mm, hard, 99.6+%

GF13900205

钛, tube, 100mm, outside diameter 0.51mm, inside diameter 0.35mm, wall thickness 0.08mm, annealed, 99.6+%

GF49264713

钛, tube, 200mm, outside diameter 1.6mm, inside diameter 1.2mm, wall thickness 0.2mm, hard, 99.6+%

GF43519945

钛, wire reel, 2m, diameter 1.0mm, as drawn, 99.99+%

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钛, rod, 1000mm, diameter 5mm, annealed, 99.6+%

GF34739837

钛, sphere, 200pcs, diameter 3mm, 99.6+%

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钛, tube, 500mm, outside diameter 3.0mm, inside diameter 1.5mm, wall thickness 0.75mm, annealed, 99.6+%