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About This Item
线性分子式:
NH4F
CAS号:
分子量:
37.04
EC號碼:
MDL號碼:
分類程式碼代碼:
12352302
eCl@ss:
38050106
PubChem物質ID:
推荐产品
等級
ACS reagent
puriss. p.a.
化驗
≥98%
形狀
solid
雜質
≤0.1% hexafluorosilicate (as SiF6)
≤1% ammonium hydrogen difluoride (NH4HF2)
燃燒殘留物
≤0.005% (as SO4)
負離子痕跡
chloride (Cl-): ≤5 mg/kg
sulfate (SO42-): ≤50 mg/kg
正離子痕跡
Cd: ≤5 mg/kg
Cu: ≤5 mg/kg
Fe: ≤5 mg/kg
K: ≤20 mg/kg
Na: ≤20 mg/kg
Pb: ≤5 mg/kg
Zn: ≤5 mg/kg
SMILES 字串
N.F
InChI
1S/FH.H3N/h1H;1H3
InChI 密鑰
LDDQLRUQCUTJBB-UHFFFAOYSA-N
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訊號詞
Danger
危險分類
Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral
儲存類別代碼
6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects
水污染物質分類（WGK）
WGK 1
閃點（°F）
does not flash
閃點（°C）
does not flash
Etching processing of Si (111) and Si (100) surfaces in an ammonium fluoride solution investigated by in situ ATR-IR.
Nakamura M, et al.
Electrochimica Acta, 41(5), 681-686 (1996)
On the Etching of Silicon by Oxidants in Ammonium Fluoride Solutions A Mechanistic Study.
Gerischer H and Lubke M.
Journal of the Electrochemical Society, 135(11), 2782-2786 (1988)
Surface analysis of the electropolishing layer on Si (111) in ammonium fluoride solution.
Lewerenz HJ, et al.
Electrochimica Acta, 45(28), 4615-4627 (2000)
Jae Hoon Bong et al.
Nanoscale, 6(15), 8503-8508 (2014-06-21)
We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We
Ryo Jimbo et al.
Clinical implant dentistry and related research, 10(1), 55-61 (2008-02-08)
Previously, we reported that anodized porous titanium implants have photocatalytic hydrophilicity. However, this effect was not always sufficient for the significant improvement of bone apposition. The purpose of this study was to improve the photocatalytic properties of porous titanium implants
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