推荐产品
蒸汽壓力
<0.01 mmHg ( 25 °C)
化驗
99.999%
形狀
wire
製造商／商標名
Goodfellow 295-808-91
電阻係數
8.37 μΩ-cm
長度 × 直徑
1 m × 1.8 mm
mp
156.6 °C (lit.)
密度
7.3 g/mL at 25 °C (lit.)
SMILES 字串
[In]
InChI
1S/In
InChI 密鑰
APFVFJFRJDLVQX-UHFFFAOYSA-N
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一般說明
For updated SDS information please visit www.goodfellow.com.
法律資訊
Product of Goodfellow
危險聲明
危險分類
Aquatic Chronic 2
儲存類別代碼
13 - Non Combustible Solids
水污染物質分類（WGK）
WGK 3
閃點（°F）
Not applicable
閃點（°C）
Not applicable
Methodologic and basic aspects of indium-111 platelets.
J H Joist et al.
Seminars in thrombosis and hemostasis, 9(2), 86-99 (1983-04-01)
New generation of palladium-indium-silver dental cast alloys: a review.
M L Malhotra
Trends & techniques in the contemporary dental laboratory, 9(4), 65-68 (1992-05-01)
Uwe Schneider et al.
Accounts of chemical research, 45(8), 1331-1344 (2012-05-26)
The development of innovative metal catalysis for selective bond formation is an important task in organic chemistry. The group 13 metal indium is appealing for catalysis because indium-based reagents are minimally toxic, selective, and tolerant toward various functional groups. Among
Alex N Eberle et al.
Journal of molecular recognition : JMR, 16(5), 248-254 (2003-10-03)
Following the first synthesis of tritiated alpha-melanocyte-stimulating hormone (alpha-MSH, alpha-melanotropin) in 1974 by Medzihradszky et al., several alpha-MSH analogs were designed containing between 2 and 12 tritium atoms, the latter of which displayed a specific radioactivity of 12.21 GBq/micromol (330
Akiyo Tanaka
Toxicology and applied pharmacology, 198(3), 405-411 (2004-07-28)
Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers
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