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描述
hexagonal phase
品質等級
化驗
≥97.5%
形狀
powder
粒徑
−400 mesh
mp
2700 °C (lit.)
密度
3.22 g/mL at 25 °C (lit.)
SMILES 字串
[C-]#[Si+]
InChI
1S/CSi/c1-2
InChI 密鑰
HBMJWWWQQXIZIP-UHFFFAOYSA-N
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一般說明
碳化硅(SiC)是一种半导体材料,具有密闭堆积的硅和碳双层结构。它具有出色的热机械和电性能,这使得其可用于多种电子和光电应用中。
應用
SiC主要可作为基材用于例如微结构、 光电设备(发光二极管(LED)、紫外线检测器)、 高温电子设备(核电子设备)、 和高频设备等应用中。
儲存類別代碼
11 - Combustible Solids
水污染物質分類(WGK)
nwg
閃點(°F)
Not applicable
閃點(°C)
Not applicable
個人防護裝備
dust mask type N95 (US), Eyeshields, Gloves
历史批次信息供参考:
Sensors (Basel, Switzerland), 19(23) (2019-11-27)
In this paper, the characterization of the main techniques and transducers employed to measure local and global strains induced by uniaxial loading of murine tibiae is presented. Micro strain gauges and digital image correlation (DIC) were tested to measure local
Fundamentals of silicon carbide technology: growth, characterization, devices and applications
Fundamentals of silicon carbide technology: growth, characterization, devices and applications (2014)
Properties of silicon carbide (1995)
A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices
IEEE Transactions on Power Electronics, 29(5), 2606-2617 (2013)
Optical polarization of nuclear spins in silicon carbide
Physical Review Letters, 114(24), 247603-247603 (2015)
商品
Three approaches generate white light, including LED-based down-conversion for broader applications.
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