447048
1,2-Bis(trichlorosilyl)ethane
97%
Synonym(s):
1,1,1,4,4,4-Hexachlorodisilethylene
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About This Item
Linear Formula:
Cl3SiCH2CH2SiCl3
CAS Number:
Molecular Weight:
296.94
Beilstein:
1753707
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23
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Assay
97%
form
solid
refractive index
n20/D 1.475 (lit.)
bp
202 °C (lit.)
mp
27-29 °C (lit.)
density
1.483 g/mL at 25 °C (lit.)
SMILES string
Cl[Si](Cl)(Cl)CC[Si](Cl)(Cl)Cl
InChI
1S/C2H4Cl6Si2/c3-9(4,5)1-2-10(6,7)8/h1-2H2
InChI key
WDVUXWDZTPZIIE-UHFFFAOYSA-N
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General description
1,2-Bis(trichlorosilyl)ethane is an alkylchlorosilane that couples with surface atoms present on the metal surfaces. It is mainly utilized as a protective coating and a coupling agent that enhances the absorption of the self-assembled monolayer (SAM) on the surface of the metal. It chemically modifies the substrate material and acts as an anti-corrosive layer.
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Eye Dam. 1 - Skin Corr. 1B
Supplementary Hazards
Storage Class Code
8A - Combustible corrosive hazardous materials
WGK
WGK 1
Flash Point(F)
No data available
Flash Point(C)
No data available
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Chemical Modification of an Alkanethiol Self-Assembled Layer to Prevent Corrosion of Copper
Haneda R. et al.
Journal of the Electrochemical Society, 144(4), 1215-1221 (1997)
Packing Defects in Fatty Amine Self-Assembled Monolayers on Mica as Revealed from AFM Techniques
Beni?tez JJ, et al.
The Journal of Physical Chemistry B, 122(2), 493-499 (2017)
Preparation and Evaluation of Two-Dimensional Polymer Films by Chemical Modification of an Alkanethiol Self-Assembled Monolayer for Protection of Copper Against Corrosion
Itoh M, et al.
Journal of the Electrochemical Society, 142(11), 3696-3704 (1995)
Shengxia Li et al.
Chemistry (Weinheim an der Bergstrasse, Germany), 21(49), 17762-17768 (2015-10-20)
New cross-linking reagents were synthesized and mixed with polystyrene (PS) in solution to form a blend. Thin-films were spin-coated from the blend and then cross-linked by thermal activation at relatively low temperature (100 °C) to form cross-linked gate dielectrics. This new
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