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Graphene FET chip

Name: Graphene FET chip
Brand: ALDRICH

S10

Synonym(s):

Graphene FET, Graphene FET sensor, Graphene FET with 30 Hall-bar devices and 6 2-probe configurations with varied channel geometry

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About This Item

NACRES:

NA.23

UNSPSC Code:

43211915

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Properties

description

Dirac point:< 50 V , Gate Oxide material: SiO₂, Gate Oxide thickness: 90 nm, Graphene field-effect mobility: >1000 cm²/V·s, Maximum gate-source voltage: ± 50 V
Maximum temperature rating: 150 °C
Maximum drain-source current density: 107 A/cm², Metallization: Chromium 2 nm/Gold 50 nm, Monolayer CVD grown Graphene based field effect transistors (FET) S10, Residual charge carrier density: <2 x 10¹² cm^-2, Resistivity of substrate: 1-10 Ω·cm, Yield >75%

Description

General description

Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm². The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.

Device configuration:

This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.
The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.

Application

Graphene device research
FET based sensor research for active materials deposited on graphene
Chemical sensors
Biosensors
Bioelectronics
Magnetic sensors
Photodetectors

GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.

Features and Benefits

Device Features:

State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene
Devices are not encapsulated and can be functionalized by additives
Perfect platform for sensor research and development
36 individual graphene FETs per chip
Mobilities typically > 1000 cm2/V·s

Disclaimer

Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors.
To maintain the quality of the devices, we recommend taking the following precautions:

Be careful when handling the graphene FET chip.
Tweezers should not contact the device area directly.

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This Item	GRFETS20	900450	900561
Sigma-Aldrich GRFETS10 Graphene FET chip	Sigma-Aldrich GRFETS20 Graphene FET chip	Sigma-Aldrich 900450 Graphene dispersion	Sigma-Aldrich 900561 Graphene
description S10	description S20	description 1 mg/mL in DMF, sheet resistance 4.8 kΩ/sq, avg. no. of layers, 1 ‑ 3	description powder, electrical conductivity >10³ S/m, avg. no. of layers, < 3
description Resistivity of substrate: 1-10 Ω·cm, Residual charge carrier density: <2 x 10¹² cm^-2, Graphene field-effect mobility: >1000 cm²/V·s, Maximum gate-source voltage: ± 50 V Maximum temperature rating: 150 °C Maximum drain-source current density: 107 A/cm², Metallization: Chromium 2 nm/Gold 50 nm, Gate Oxide material: SiO₂, Dirac point:< 50 V , Yield >75%	description Chip thickness: 675 μm, Number of devices per chip: 12, Resistivity of substrate: 1-10 Ω·cm Metallization: Chromium/Gold-Palladium 2/50 nm, Monolayer CVD grown Graphene based 2-probe field effect transistors (FET)., Gate oxide materials: 90 nm SiO₂, Absolute Maximum Ratings Maximum gate-source voltage: ± 50 V Maximum temperature rating: 150 °C Maximum drain-source current density: 10⁷ A/cm², Encapsulation: 50 nm Al₂O₃ + 100 nm Si₃N₄, Dirac point: < 50 V Yield >75%, Chip dimensions: 10 mm x 10 mm, Graphene field-effect mobility: >1000 cm²/V·s	description Electrodes	description -

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Storage Class

11 - Combustible Solids

WGK

nwg

Flash Point (°F)

Not applicable

Flash Point (°C)

Not applicable

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