244651
Tin(IV) oxide
−325 mesh, 99.9% trace metals basis
Synonym(s):
Stannic oxide
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About This Item
Linear Formula:
SnO2
CAS Number:
Molecular Weight:
150.71
EC Number:
MDL number:
UNSPSC Code:
12352303
PubChem Substance ID:
NACRES:
NA.23
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Assay
99.9% trace metals basis
form
powder
particle size
−325 mesh
density
6.95 g/mL at 25 °C (lit.)
application(s)
battery manufacturing
SMILES string
O=[Sn]=O
InChI
1S/2O.Sn
InChI key
XOLBLPGZBRYERU-UHFFFAOYSA-N
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General description
Tin(IV) oxide (SnO2) is an n-type wide band gap semiconductor with high transmittance at nearIR and visible region. It is scratch resistant and chemically inert.
Application
Tin(IV) oxide has been used to prepare thin films of TiO2-doped SnO2 oxide nanocomposites.
It can be used as astarting material to prepare niobium and zinc-doped titanium-tin-oxidesolid-solution ceramics, which are applicable in the field of electronicdevices.
It can be used as astarting material to prepare niobium and zinc-doped titanium-tin-oxidesolid-solution ceramics, which are applicable in the field of electronicdevices.
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Customers Also Viewed
Li-Ping Li et al.
Chemical communications (Cambridge, England), 49(17), 1762-1764 (2013-01-25)
ZnSn(OH)(6) and binary-component SnO(2)-ZnSn(OH)(6) were introduced as affinity probes for phosphopeptide enrichment for the first time. Two strategies, either ZnSn(OH)(6) and SnO(2) serial enrichment or binary-component SnO(2)-ZnSn(OH)(6) enrichment in a single run, were proposed to enhance multi-phosphopeptide enrichment and to
Dawei Su et al.
Chemical communications (Cambridge, England), 49(30), 3131-3133 (2013-03-13)
An in situ hydrothermal synthesis approach has been developed to prepare SnO2@graphene nanocomposites. The nanocomposites exhibited a high reversible sodium storage capacity of above 700 mA h g(-1) and excellent cyclability for Na-ion batteries. In particular, they also demonstrated a
Gun-Joo Sun et al.
Nanotechnology, 24(2), 025504-025504 (2012-12-15)
Networked SnO(2) nanowire sensors were achieved using the selective growth of SnO(2) nanowires and their tangling ability, particularly on on-chip V-groove structures, in an effort to overcome the disadvantages imposed on the conventional trench-structured SnO(2) nanowire sensors. The sensing performance
Jaewon Jang et al.
Advanced materials (Deerfield Beach, Fla.), 25(7), 1042-1047 (2012-11-20)
This work employs novel SnO(2) gel-like precursors in conjunction with sol-gel deposited ZrO(2) gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm(2) V(-1) s(-1) in saturation at operation voltages
Hui Song et al.
Nanoscale, 5(3), 1188-1194 (2013-01-10)
One-dimensional (1-D) SnO(2) nanorods (NRs) with a rutile structure are grown on various substrates regardless of the lattice-mismatch by using a new nutrient solution based on tin oxalate, which generated supersaturated Sn(2+) sources. These affluent sources are appropriate for producing
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