Skip to Content
Merck
All Photos(3)

Documents

215066

Sigma-Aldrich

Gallium(III) oxide

≥99.99% trace metals basis

Synonym(s):

Gallium trioxide

Sign Into View Organizational & Contract Pricing


About This Item

Empirical Formula (Hill Notation):
Ga2O3
CAS Number:
Molecular Weight:
187.44
EC Number:
MDL number:
UNSPSC Code:
12352303
PubChem Substance ID:
NACRES:
NA.23

Assay

≥99.99% trace metals basis

form

(crystalline powder)

reaction suitability

reagent type: catalyst
core: gallium

density

5.88 g/mL at 25 °C

SMILES string

O=[Ga]O[Ga]=O

InChI

1S/2Ga.3O

InChI key

QZQVBEXLDFYHSR-UHFFFAOYSA-N

Looking for similar products? Visit Product Comparison Guide

General description

Gallium(III) oxide (Ga2O3) is a wide band gap semiconductor that belongs to a family of transparent semiconducting oxides (TSO). It can form different polymorphs such as α-,β-, γ-, δ-, and ε-. Polycrystalline and nanocrystalline Ga2O3 can be prepared using several methods such as chemical vapor deposition, thermal vaporization, and sublimation, molecular beam epitaxy, melt growth, etc. It is widely used as a functional material in various applications including optoelectronics, chemical sensors, catalysis, semiconductor devices, field-effect transistors, and many others.

Application

Ga2O3 is widely used as a host material for the fabrication of electroluminescent devices. For example, europium-doped Ga2O3 thin films can be used as a light-emitting layer to fabricate an optically transparent electroluminescent device.

Due to its distinct optical and electrical properties like moderate conductivity and high laser damage threshold, Ga2O3 can be used in laser-driven electron accelerators, low-loss plasmonics, and Si-based dielectric laser accelerators.

It can also be used as an effective catalyst for the dehydrogenation of propane to propene.
Starting material for the preparation of Sr2CuGaO3S, an example of a rare square pyramidal gallium.

Storage Class Code

11 - Combustible Solids

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Farheen N Sayed et al.
Journal of nanoscience and nanotechnology, 11(4), 3363-3369 (2011-07-23)
We report on the structural and magnetic properties of nanoparticles of NiGa2O4 and 5 at.% M doped (M = Mn2+, Cu2+, Co2+, Fe3+ and Tb3+) at Ga site of NiGa2O4, synthesized by gel-combustion method. The particle size, as investigated by
Weirong Zhao et al.
Journal of hazardous materials, 192(3), 1548-1554 (2011-07-20)
Mesoporous wide bandgap semiconductors offer high photocatalytic oxidation and mineralization activities. In this study, mesoporous β-Ga(2)O(3) diamond nanorods with 200-300 nm in diameter and 1.0-1.2 μm in length were synthesized via a urea-based hydrothermal method using polyethylene glycol (PEG) as
Liang Qiao et al.
Proteomics, 11(17), 3501-3509 (2011-07-14)
β-Ga(2)O(3) is a wide-band-gap semiconductor having strong oxidation ability under light irradiation. Herein, the steel target plates modified with β-Ga(2)O(3) nanoparticles have been developed to carry out in-source photo-catalytic oxidative reactions for online peptide tagging during laser desorption/ionization mass spectrometry
Yi-Jen Wu et al.
ACS nano, 4(3), 1393-1398 (2010-02-13)
Light-scattering properties of individual gold-in-Ga(2)O(3) peapod nanowires and gold-in-Ga(2)O(3) core/shell nanowires were investigated by optical dark-field microscopy. The observed scattering peaks are suggested to result from plasmonic resonance of the gold nanopeas and nanorods in the Ga(2)O(3) nanowires. As the
Rujia Zou et al.
Small (Weinheim an der Bergstrasse, Germany), 7(23), 3377-3384 (2011-10-06)
Nanoelectromechanical system switches are seen as key devices for fast switching in communication networks since they can be switched between transmitting and receiving states with an electrostatic command. Herein, the fabrication of practical, nanoscale electrically/thermally driven switches is reported based

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service