203351
Germanium
powder, −100 mesh, ≥99.99% trace metals basis
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About This Item
Empirical Formula (Hill Notation):
Ge
CAS Number:
Molecular Weight:
72.64
EC Number:
MDL number:
UNSPSC Code:
12141716
PubChem Substance ID:
NACRES:
NA.23
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Quality Level
Assay
≥99.99% trace metals basis
form
powder
resistivity
53 Ω-cm, 20°C
particle size
−100 mesh
bp
2830 °C (lit.)
mp
937 °C (lit.)
density
5.35 g/mL at 25 °C (lit.)
SMILES string
[Ge]
InChI
1S/Ge
InChI key
GNPVGFCGXDBREM-UHFFFAOYSA-N
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Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 2 - Flam. Sol. 1 - Repr. 2 - STOT RE 2 Oral
Target Organs
Kidney
Storage Class Code
4.1B - Flammable solid hazardous materials
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Lu Dai et al.
Nanoscale, 5(3), 971-976 (2012-12-15)
The controllable fabrication of self-scrolling SiGe/Si/Cr helical nanoribbons on Si(111) substrates is investigated. The initial lateral etching profile of the Si(111) substrates shows a 2-fold rotational symmetry using 4% ammonia solution, which provides guidance for initial scrolling of one-end-fixed nanoribbons
Jin Liu et al.
Dalton transactions (Cambridge, England : 2003), 42(14), 5092-5099 (2013-02-13)
In this study, Zn2GeO4 hollow spheres were successfully fabricated by a template-engaged approach using zinc hydroxide carbonate (Zn4CO3(OH)6·H2O, ZHC) spheres as the template. During the hydrothermal process, Zn(2+) dissolved from the surface of the ZHC spheres could rapidly react with
W Streyer et al.
Optics express, 21(7), 9113-9122 (2013-04-11)
We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12µm) using a two-layer system consisting of heavily-doped silicon and a thin high-index germanium dielectric layer. We demonstrate spectral control of the absorption resonance by varying the thickness of
Michael Oehme et al.
Optics express, 21(2), 2206-2211 (2013-02-08)
In this paper we investigate the influence of n-type doping in Ge light emitting diodes on Si substrates on the room temperature emission spectrum. The layer structures are grown with a special low temperature molecular beam epitaxy process resulting in
Miroslav Cerný et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035401-035401 (2012-12-15)
The response of three covalent crystals with a diamond lattice (C, Si and Ge) to uniaxial and a special triaxial (generally nonhydrostatic) loading is calculated from first principles. The lattice deformations are described in terms of variations of bond lengths
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