646687
Silicon
wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Synonym(s):
Silicon element
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About This Item
Linear Formula:
Si
CAS Number:
Molecular Weight:
28.09
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
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form
crystalline (cubic (a = 5.4037))
wafer (single side polished)
Quality Level
does not contain
dopant
diam. × thickness
2 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
semiconductor properties
<100>, N-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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General description
Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.
Application
- Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.: This article addresses the challenges and real-world applications of high-performance silicon anodes in lithium-ion batteries, presenting innovative solutions to enhance their efficiency (Khan et al., 2024).
- Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.: This research focuses on strain engineering to improve the fabrication of freestanding perovskite oxides, which are crucial for various high-purity silicon applications in academia (Yun et al., 2024).
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″
Storage Class Code
13 - Non Combustible Solids
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
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A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Min Joon Huang et al.
Journal of nanoscience and nanotechnology, 13(6), 3810-3817 (2013-07-19)
In this work, we demonstrated a silicon nanowire (SiNW) biosensing platform capable of simultaneously identifying different Dengue serotypes on a single sensing chip. Four peptide nucleic acids (PNAs), specific to each Dengue serotypes (DENV-1 to DENV-4), were spotted on different
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Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
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