594911
Silicon carbide
nanopowder, <100 nm particle size
Synonym(s):
Carbon silicide, Carborundum, Methanidylidynesilanylium, Silicon monocarbide
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About This Item
Recommended Products
form
nanopowder
Quality Level
surface area
70-90 m2/g
particle size
<100 nm
mp
2700 °C (lit.)
density
3.22 g/mL at 25 °C (lit.)
bulk density
0.069 g/cm3
SMILES string
[C-]#[Si+]
InChI
1S/CSi/c1-2
InChI key
HBMJWWWQQXIZIP-UHFFFAOYSA-N
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General description
Silicon carbide (SiC), also known as carborundum, is composed of silicon and carbon, forming a hard refractory ceramic material that exhibits extreme mechanical and thermal stability. This product is a SiC nanopowder with a particle size less than 100 nm and a high surface area of 70-90 m2/g. Our product is primarily made of the beta phase with approximately 3-15% adopting an amorphous structure. With a Mohs scale hardness of 9.5, silicon carbide is one of the hardest materials, which make its nanopowder useful in the production of abrasives for polishing and grinding and as a coating or composite material for high wear-resistance. SiC nanoparticles are also under research as sensors and imaging nanoprobes for bioscience and clinical diagnosis.
Application
- Overview of silicon carbide power devices: This document provides a comprehensive review of the characteristics and applications of silicon carbide (SiC) in power devices, discussing its advantages over traditional silicon devices in handling high voltages and efficiencies (Choi, 2016).
Physical form
primarily beta phase (3-15% amorphous)
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Journal of the American Chemical Society, 134(42), 17400-17403 (2012-10-13)
Silicon carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting SiC-based technologies is the high-temperature synthesis. In this work, we provide unprecedented experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using
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Polycabosilane (PCS) could be spun to form fiber web by electrospinning PCS solution in 30% dimethylformide (DMF)/toluene solvent at 25 kV. The electrospun web is stabilized at 200 degrees C for 1 hour to connect fibers by softening PCS webs
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