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Merck

495425

Sigma-Aldrich

Gallium–Indium eutectic

Ga 75.5% / In 24.5%, ≥99.99% trace metals basis

Sinónimos:

EGaIn

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About This Item

Número MDL:
Código UNSPSC:
11101711
ID de la sustancia en PubChem:
NACRES:
NA.23

Nivel de calidad

Ensayo

≥99.99% trace metals basis

Formulario

liquid

composición

Ga 75.5% / In 24.5%

mp

15.7 °C (lit.)

densidad

6.25 g/mL at 25 °C (lit.)

cadena SMILES

[Ga].[In]

InChI

1S/Ga.In

Clave InChI

SPAHBIMNXMGCMI-UHFFFAOYSA-N

Descripción general

Gallium-indium eutectic 99.99% is a unique liquid metal alloy with a melting point of 15.7°C. It has a self-limiting oxide layer that retains its shape, making it ideal for use in various applications. This material is easy to mold, stretch, and form into a variety of shapes. It is also self-healing, which makes it useful in situations where the material may experience wear and tear. With its exceptional properties, gallium-indium eutectic 99.99% is a valuable material for a range of industries, including electronics, robotics, and medical devices.

Aplicación

In the electronics industry, gallium-indium eutectic 99.99% is used as a thermal interface material due to its high thermal conductivity. It is also used as a flexible conductor in soft robotics and stretchable electronics. Because of its ability to conform to irregular shapes and high electronic conductivity, EGaIn is commonly used as an electrical contact for device testing and as the top contact in molecular electronics applications. Additionally, this liquid metal alloy is utilized in medical devices such as soft implants and wearable health monitors due to its biocompatibility and flexibility. Gallium-indium eutectic 99.99% has a wide range of potential applications, and its unique properties make it a valuable material for many industries.

Características y beneficios

  • Increase Power Performance: Its high thermal conductivity makes it a high-performing thermal interface material for increased power performance in electronics.

  • Simplify Electrical Contact: Its excellent electronic conductivity, conformal shape, and self-healing properties make it easy to make electrical contact for devices and molecular electronics

  • Robust Contact: This material conforms to irregular shapes, making it perfect for use in soft robotics and stretchable electronics as a flexible conductor and robust contact.

Palabra de señalización

Danger

Frases de peligro

Clasificaciones de peligro

Acute Tox. 4 Oral - Aquatic Chronic 3 - Met. Corr. 1 - STOT RE 1 Inhalation

Órganos de actuación

Lungs

Código de clase de almacenamiento

6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects

Clase de riesgo para el agua (WGK)

WGK 3

Punto de inflamabilidad (°F)

Not applicable

Punto de inflamabilidad (°C)

Not applicable

Equipo de protección personal

Eyeshields, Faceshields, Gloves, type P3 (EN 143) respirator cartridges


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Effect of oxidation on the mechanical properties of liquid gallium and eutectic gallium-indium.
Xu Q, et al.
Physics of Fluids, 24(6) (2012)
Claudio Fontanesi et al.
Scientific reports, 9(1), 8735-8735 (2019-06-21)
Electroactive self-assembled monolayers (SAMs) bearing a ferrocene (Fc) redox couple were chemically assembled on H-terminated semiconducting degenerate-doped n-type Si(111) substrate. This allows to create a Si(111)|organic-spacer|Fc hybrid interface, where the ferrocene moiety is covalently immobilized on the silicon, via two
Biwei Deng et al.
Advanced materials (Deerfield Beach, Fla.), 31(14), e1807811-e1807811 (2019-02-15)
In this work, a general mechanism is discovered to form liquid-metal-based, stable and stretchable conductive patterns on rigid and soft substrates. It is discovered that pulsed laser irradiation of liquid metal nanoparticles (LMNPs) with tunable conditions can induce transformation to
Formation of Spherical and Non-Spherical Eutectic Gallium-Indium Liquid-Metal Microdroplets in Microfluidic Channels at Room Temperature
Hutter T, et al.
Advances in Functional Materials, 22(12), 2624-2631 (2012)
Li Ding et al.
ACS nano (2020-10-09)
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