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M0753

Sigma-Aldrich

Molybdenum(VI) oxide

ReagentPlus®, ≥99.5%

Synonym(s):

Molybdenum trioxide

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About This Item

Linear Formula:
MoO3
CAS Number:
1313-27-5
Molecular Weight:
143.94
EC Number:
215-204-7
MDL number:
MFCD00003469
UNSPSC Code:
12352303
PubChem Substance ID:
329817827
NACRES:
NA.55
Assay:
≥99.5%
form:
crystals

Quality Level

200

product line

ReagentPlus®

Assay

≥99.5%

form

crystals

reaction suitability

reagent type: catalyst
core: molybdenum

mp

795 °C (lit.)

cation traces

NH4+: ≤0.02%

SMILES string

O=[Mo](=O)=O

InChI

1S/Mo.3O

InChI key

JKQOBWVOAYFWKG-UHFFFAOYSA-N

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Application

Precursor to LAMOX fast ion conductors and superconductors.
Used in the solid state synthesis of a remarkable ternary, reduced molybdenum oxide, Pr4Mo9O18, whose structure contains previously unknown Mo7, Mo13 and Mo19 clusters. The new cluster product is a small band gap semiconductor.

Legal Information

ReagentPlus is a registered trademark of Merck KGaA, Darmstadt, Germany

Pictograms

Health hazardExclamation mark
GHS08,GHS07

Signal Word

Warning

Hazard Statements

H319,H335,H351

Hazard Classifications

Carc. 2 - Eye Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

11 - Combustible Solids

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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Certificates of Analysis (COA)

Lot/Batch Number
0000416058
0000416058
0000397261
0000391632
0000390942

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Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to
Design of transparent anodes for resonant cavity enhanced light harvesting in organic solar cells.
Nicholas P Sergeant et al.
Advanced materials (Deerfield Beach, Fla.), 24(6), 728-732 (2012-01-04)
Patrick R Brown et al.
Nano letters, 11(7), 2955-2961 (2011-06-15)
The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of
Claudio Girotto et al.
ACS applied materials & interfaces, 3(9), 3244-3247 (2011-08-13)
We report on a sol-gel-based technique to fabricate MoO(3) thin films as a hole-injection layer for solution-processed or thermally evaporated organic solar cells. The solution-processed MoO(3) (sMoO(3)) films are demonstrated to have equal performance to hole-injection layers composed of either
Di-Yan Wang et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3415-3420 (2012-06-08)
A heterojunction photodiode with NIR photoresponse using solution processable pyrite FeS(2) nanocrystal ink is demonstrated which has the advantages of earth-abundance and non-toxicity. The device consists of a FeS(2) nanocrystal (NC) thin film sandwiched with semiconducting metal oxides with a
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