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GF78053384

Tantalum

foil, 4mm disks, thickness 0.01mm, 99.9%

Synonym(s):

Tantalum, TA000290, Ta

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About This Item

Empirical Formula (Hill Notation):
Ta
CAS Number:
Molecular Weight:
180.95
MDL number:
UNSPSC Code:
12141741
PubChem Substance ID:
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 537.2 °C)

assay

99.9%

form

foil

autoignition temp.

572 °F

manufacturer/tradename

Goodfellow 780-533-84

resistivity

13.5 μΩ-cm, 20°C

diam. × thickness

4 mm × 0.01 mm

bp

5425 °C (lit.)

mp

2996 °C (lit.)

density

16.69 g/cm3 (lit.)

SMILES string

[Ta]

InChI

1S/Ta

InChI key

GUVRBAGPIYLISA-UHFFFAOYSA-N

General description

For updated SDS information please visit www.goodfellow.com.

Legal Information

Product of Goodfellow

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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[The experimental and clinical studies on the anastomosis of the intercostal nerve to the splanchnic nerve by means of metal tantalum foil (an operative procedure on the so-called abdominal neurosis)].
S Bando
Kobe Ika Daigaku kiyo, 26(3), 98-112 (1964-07-01)
Hongbin Yu et al.
PloS one, 8(6), e66447-e66447 (2013-06-27)
We report a simple method to fabricate nano-porous tantalum oxide films via anodization with Ta foils as the anode at room temperature. A mixture of ethylene glycol, phosphoric acid, NH4F and H2O was used as the electrolyte where the nano-porous
Xianfeng Yang et al.
Journal of the American Chemical Society, 131(34), 12048-12049 (2009-08-27)
A rutile microstructure with a novel cross-medal morphology was prepared via a hydrothermal method by using a Tantalum foil as both the doping source and the substrate. This rutile cross-medal prefers to grow along an unprecedented preferential orientation of <110>
Observations on the use of tantalum foil in peripheral nerve surgery.
N C NORCROSS et al.
Journal of neurosurgery, 4(1), 69-71 (1947-01-01)
Xinjian Feng et al.
Nano letters, 10(3), 948-952 (2010-02-12)
Tantalum nitride (Ta3N5) has a band gap of approximately 2.07 eV, suitable for collecting more than 45% of the incident solar spectrum energy. We describe a simple method for scale fabrication of highly oriented Ta3N5 nanotube array films, by anodization

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