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692824

Sigma-Aldrich

Tantalum

powder, 60-100 mesh, 99.9%

Synonym(s):

Ta

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About This Item

Empirical Formula (Hill Notation):
Ta
CAS Number:
Molecular Weight:
180.95
MDL number:
UNSPSC Code:
12161600
PubChem Substance ID:
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 537.2 °C)

assay

99.9%

form

powder

autoignition temp.

572 °F

reaction suitability

reagent type: catalyst
core: tantalum

resistivity

13.5 μΩ-cm, 20°C

particle size

60-100 mesh

bp

5425 °C (lit.)

mp

2996 °C (lit.)

density

16.69 g/cm3 (lit.)

SMILES string

[Ta]

InChI

1S/Ta

InChI key

GUVRBAGPIYLISA-UHFFFAOYSA-N

pictograms

Flame

signalword

Danger

hcodes

Hazard Classifications

Flam. Sol. 1

Storage Class

4.1B - Flammable solid hazardous materials

wgk_germany

nwg

flash_point_f

Not applicable

flash_point_c

Not applicable


Certificates of Analysis (COA)

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Sining Yun et al.
ChemSusChem, 6(3), 411-416 (2013-01-31)
Ta-based compounds show Pt-like behavior: Binary tantalum compounds as counter electrodes (CEs) in dye-sensitized solar cells (DSCs) demonstrate Pt-like electrocatalytic activity and competitive photovoltaic performance, matching the performance of DSCs with Pt CEs. The first-principle density functional theory (DFT) calculations
Re: Fernandez-Fairen M, Murcia A, Torres A, et al. Is anterior cervical fusion with a porous tantalum implant a cost-effective method to treat cervical disc disease with radiculopathy? Spine 2012; 37:1734–41.
Robert A Beatty
Spine, 38(4), 369-369 (2012-10-13)
In response.
Mariano Fernandez Fairen et al.
Spine, 38(4), 370-371 (2012-12-04)
Gaurav Jindal et al.
Otolaryngologic clinics of North America, 45(6), 1423-1449 (2012-11-17)
A review of the current clinical applications of a variety of percutaneous and endovascular interventional procedures of the extracranial head and neck is presented. After a description of general principles and embolic agents for interventional procedures, management of specific disorders
Tohru Tsuruoka et al.
Nanotechnology, 23(43), 435705-435705 (2012-10-13)
Quantized conductance was observed in a cation-migration-based resistive switching memory cell with a simple metal-insulator-metal (MIM) structure using a thin Ta(2)O(5) layer. The observed conductance changes are attributed to the formation and dissolution of a metal filament with an atomic

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