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Documentos clave

920134

Sigma-Aldrich

Graphene, monolayer film

6 in diameter, CVD on silicon wafer, large grain, avg. no. of layers, 1

Sinónimos:

Roll-to-Roll graphene

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About This Item

Fórmula empírica (notación de Hill):
C
Número de CAS:
1034343-98-0
Peso molecular:
12.01
Número MDL:
MFCD00146977
Código UNSPSC:
12141908
NACRES:
NA.23

Nombre del producto

R2R Monolayer large grain CVD graphene on silicon wafer, 6 in diameter, avg. no. of layers, 1

Nivel de calidad

100

descripción

Growth method: roll-to-roll CVD
Wafer: SiO2 (300nm) Si
Number of layer: Monolayer
Raman intensity 2D/G: ≥1.5

Características

avg. no. of layers 1

resistencia de la lámina

280 Ω/sq ±10%

tamaño

110 μm × 110 μm ± 10%, grain size

cobertura de la superficie

surface coverage >98%

transmitancia

>97%

propiedades de los semiconductores

(mobility>3000 cm2/V·s) (Hall effect measurements)

cadena SMILES

NC.NC.NC.NC.NC.NC.NC.NC.NC

InChI

1S/9CH5N/c9*1-2/h9*2H2,1H3

Clave InChI

DXIFQVRACSPGSU-UHFFFAOYSA-N

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Descripción general

Roll-to-roll, high-quality, monolayer CVD graphene with large grain size (~110μm^2) on 6 inch silicon wafer.

Aplicación

Our Roll-to-Roll CVD graphene products are true monolayer high quality graphene, fabricated inside a Cleanroom, heavily monitored and QC to assure high reproducibility.
The roll-to-roll process allows continuous, large scale graphene production.

This large grain size graphene product on silicon wafer is ready to use, helps you minimize process time, and increase success rate. This product with low sheet resistance would enable unmatched reproducibility and allow high performance for CVD graphene based FET, CVD graphene based sensors, and heterostructure based micro/nano electronics.

Application examples:
  • Ultrafast Transistor
  • Optical devices
  • Bio/Gas Sensor
  • Transparent Electrode
  • Flexible Display
  • Smart Coating
  • Thermal management

Precaución

Be cautious not to drop
Keep away from contamination, heat, dust and flame etc.

Almacenamiento y estabilidad

Avoid direct sun light, avoid high temperature, avoid high humidity, and avoid dust.

Información legal

Product of LG Electronics, R&D use only

Código de clase de almacenamiento

11 - Combustible Solids

Clase de riesgo para el agua (WGK)

WGK 3

Elija entre una de las versiones más recientes:

Certificados de análisis (COA)

Lot/Batch Number

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Visite la Librería de documentos

Integrating graphene into semiconductor fabrication lines.
Daniel Neumaier et al.
Nature materials, 18(6), 525-529 (2019-05-23)
Hao-Ling Tang et al.
ACS nano, 11(12), 12817-12823 (2017-11-29)
Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness
Bing Deng et al.
Advanced materials (Deerfield Beach, Fla.), 31(9), e1800996-e1800996 (2018-10-03)
Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain

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