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651494

Sigma-Aldrich

Gallium phosphide

(single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Gallium monophosphide

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About This Item

Linear Formula:
GaP
CAS Number:
12063-98-8
Molecular Weight:
100.70
EC Number:
235-057-2
MDL number:
MFCD00016109
UNSPSC Code:
12352300
PubChem Substance ID:
24883833
NACRES:
NA.23

form

(single crystal substrate)

resistivity

~0.3 Ω-cm

diam. × thickness

2 in. × 0.5 mm

mp

1480 °C

density

4.13 g/mL at 25 °C

semiconductor properties

<111>

SMILES string

[P]#[Ga]

InChI

1S/Ga.P

InChI key

HZXMRANICFIONG-UHFFFAOYSA-N

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Physical properties

Thermal expansion: 5.3 x 10-6/°C
Undoped (N-type semiconductor), carrier concentration = 2-6 × 1016 cm-3, EPD < 3 × 105 cm-2, growth technique = LEC

Physical form

cubic (a = 5.4505Å)

Pictograms

Exclamation mark
GHS07

Signal Word

Warning

Hazard Statements

H319,H335

Hazard Classifications

Eye Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

11 - Combustible Solids

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

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Ivan Avrutsky et al.
Optics express, 18(19), 20370-20383 (2010-10-14)
Integrated chip-scale optical systems are an attractive platform for the implementation of non-linear optical interactions as they promise compact robust devices that operate reliably with lower power consumption compared to analogs based on bulk nonlinear crystals. The use of guided
Marcos Paulo Pinheiro Ferreira et al.
Photomedicine and laser surgery, 27(6), 901-906 (2009-08-25)
To evaluate the effect of phototherapy on the viability of cultured C2C12 myoblasts under different nutritional conditions (muscle injury model) using low-energy gallium-aluminum-arsenide (GaAlAs) and aluminium-gallium-indium-phosphide (InGaAlP) lasers with different wavelengths and powers. The beneficial effects of phototherapy using low-energy
Jianwei Sun et al.
Journal of the American Chemical Society, 133(48), 19306-19309 (2011-11-05)
Colloidal GaP nanowires (NWs) were synthesized on a large scale by a surfactant-free, self-seeded solution-liquid-solid (SLS) method using triethylgallium and tris(trimethylsilyl)phosphine as precursors and a noncoordinating squalane solvent. Ga nanoscale droplets were generated in situ by thermal decomposition of the
David Richards et al.
Langmuir : the ACS journal of surfaces and colloids, 26(11), 8141-8146 (2010-02-04)
Gallium phosphide is a semiconductor material that can be used for the fabrication of optoelectronic devices. The report compares the ability of two similar organic molecules to form covalent bonds with the GaP(100) surface. Undecenoic acid (UDA) is a terminal
Stephan T Stern et al.
Toxicological sciences : an official journal of the Society of Toxicology, 106(1), 140-152 (2008-07-18)
Quantum dots (QDs) are being investigated as novel in vivo imaging agents. The leaching of toxic metals from these QDs in biological systems is of great concern. This study compared the cytotoxic mechanisms of two QD species made of different
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