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69860

Sigma-Aldrich

Molybdenum(IV) sulfide

powder

Synonym(s):

Molybdenum disulfide

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About This Item

Empirical Formula (Hill Notation):
MoS2
CAS Number:
Molecular Weight:
160.07
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23

form

powder

particle size

~6 μm (max. 40 μm)

density

5.06 g/mL at 25 °C (lit.)

SMILES string

S=[Mo]=S

InChI

1S/Mo.2S

InChI key

CWQXQMHSOZUFJS-UHFFFAOYSA-N

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General description

Molybdenum disulfide is a two dimensional layered material. Monolayers of transition metal dichalcogenides (TMDs)exhibit photoconductivity. The layers of the TMD can be mechanically or chemicaly exfoliated to form nanosheets.

Application

Acidic solution of MoS2 particles was used to catalyze hydrogen evolution at a water 1,2-dichloroethane interface. MoS2 was dispersed in N-methyl-pyrrolidone to form exfoliated MoS2 flakes of various sizes. MoS2 ink was used for inkjet printer. MoS2 may find potential applications in electronics and optoelectronics.

Storage Class Code

11 - Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Preparation of high concentration dispersions of exfoliated MoS2 with increased flake size
O?Neill A, et al.
Chemistry of Materials, 24(12), 2414- 2421 (2012)
Hydrogen evolution at polarised liquid/liquid interfaces catalyzed by molybdenum disulfide.
Hatay I, et al.
Energy & Environmental Science, 4(10), 4246-4251 (2011)
Woo Jong Yu et al.
Nature materials, 12(3), 246-252 (2012-12-18)
Graphene has attracted considerable interest for future electronics, but the absence of a bandgap limits its direct applicability in transistors and logic devices. Recently, other layered materials such as molybdenum disulphide (MoS(2)) have been investigated to address this challenge. Here
A Castellanos-Gomez et al.
Nano letters, 12(6), 3187-3192 (2012-05-31)
Single-layer MoS(2) is an attractive semiconducting analogue of graphene that combines high mechanical flexibility with a large direct bandgap of 1.8 eV. On the other hand, bulk MoS(2) is an indirect bandgap semiconductor similar to silicon, with a gap of
Simone Bertolazzi et al.
ACS nano, 5(12), 9703-9709 (2011-11-18)
We report on measurements of the stiffness and breaking strength of monolayer MoS(2), a new semiconducting analogue of graphene. Single and bilayer MoS(2) is exfoliated from bulk and transferred to a substrate containing an array of microfabricated circular holes. The

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