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Silicon

Name: Silicon
Brand: ALDRICH

wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

Synonym(s):

Silicon element

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About This Item

Linear Formula:

CAS Number:

7440-21-3

Molecular Weight:

28.09

NACRES:

NA.23

PubChem Substance ID:

24883420

UNSPSC Code:

12352300

MDL number:

MFCD00085311

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Properties

Quality Segment

100

form

crystalline (cubic (a = 5.4037)), wafer

contains

boron as dopant

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diam. × thickness

2 in. × 0.3 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

Enabling

semiconductor properties

<111>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

Description

General description

0 vortex defects. Etch pitch density (EPD) < 100 (cm^-2). Resistivity 10^-3- 40Ωcm

Oxygen content: <= 1~1.8 x 10¹⁸/cm³; Carbon content: <= 5 x 10¹⁶/cm³; Boule diameter: 1~8 ″

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This Item	647772	647101	647535
Sigma-Aldrich 647705 Silicon	Sigma-Aldrich 647772 Silicon	Sigma-Aldrich 647101 Silicon	Sigma-Aldrich 647535 Silicon
form crystalline (cubic (a = 5.4037)), wafer	form crystalline (cubic (a = 5.4037)), wafer (single side polished)	form crystalline (cubic (a = 5.4037)), wafer (single side polished)	form crystalline (cubic (a = 5.4037)), wafer (single side polished)
Quality Level 100	Quality Level 100	Quality Level 100	Quality Level 100
bp 2355 °C (lit.)	bp 2355 °C (lit.)	bp 2355 °C (lit.)	bp 2355 °C (lit.)
mp 1410 °C (lit.)	mp 1410 °C (lit.)	mp 1410 °C (lit.)	mp 1410 °C (lit.)
density 2.33 g/mL at 25 °C (lit.)	density 2.33 g/mL at 25 °C (lit.)	density 2.33 g/mL at 25 °C (lit.)	density 2.33 g/mL at 25 °C (lit.)
contains boron as dopant	contains boron as dopant	contains -	contains -

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Storage Class

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