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Sigma-Aldrich

Tris(dimethylamido)aluminum(III)

Synonym(s):

Hexakis(dimethylamido)dialuminum, Tris(dimethylamino)alane dimer

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About This Item

Linear Formula:
Al(N(CH3)2)3
CAS Number:
32093-39-3
Molecular Weight:
159.21
MDL number:
MFCD00269811
UNSPSC Code:
12352103
PubChem Substance ID:
24870625
NACRES:
NA.23

form

solid

reaction suitability

core: aluminum

mp

82-84 °C (lit.)

density

0.865 g/mL at 25 °C (lit.)

SMILES string

CN(C)[Al](N(C)C)N(C)C.CN(C)[Al](N(C)C)N(C)C

InChI

1S/6C2H6N.2Al/c6*1-3-2;;/h6*1-2H3;;/q6*-1;2*+3

InChI key

JGZUJELGSMSOID-UHFFFAOYSA-N

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General description

Atomic number of base material: 13 Aluminum

Application

Tris(dimethylamido)aluminum(III) may be used as a precursor to aluminum nitride (AlN) thin films by organometallic chemical vapor deposition (OMCVD).

Pictograms

FlameCorrosion
GHS02,GHS05

Signal Word

Danger

Hazard Statements

H260,H314

Hazard Classifications

Skin Corr. 1B - Water-react 1

Supplementary Hazards

EUH014

Storage Class Code

4.3 - Hazardous materials which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

70.0 °F - closed cup

Flash Point(C)

21.1 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Tris (dimethylamido) aluminum (III): An overlooked atomic layer deposition precursor.
Buttera SC, et al.
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, And Films, 35(1), 01B128-01B128 (2017)

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