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237264

Sigma-Aldrich

Resolve-Al La

99%

Synonym(s):

La(tmhd)3, Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum

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1 G
NOK 970.00

NOK 970.00

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1 G
NOK 970.00

About This Item

Linear Formula:
La(OCC(CH3)3CHCOC(CH3)3)3
CAS Number:
14319-13-2
Molecular Weight:
688.71
MDL number:
MFCD00010466
UNSPSC Code:
12142201
PubChem Substance ID:
24854230
NACRES:
NA.21
bp:
370 °C (lit.)

NOK 970.00

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Assay

99%

form

powder or crystals

bp

370 °C (lit.)

mp

128-131 °C (lit.)

SMILES string

CC(C)(C)C(=O)\C=C(/O[Yb](O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)C(C)(C)C

InChI

1S/3C11H20O2.La/c3*1-10(2,3)8(12)7-9(13)11(4,5)6;/h3*7,12H,1-6H3;/q;;;+3/p-3/b3*8-7-;

InChI key

IXHLTRHDDMSNAP-LWTKGLMZSA-K

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Legal Information

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
MKAA3317
09209EB
08516MZ
06830AB

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Structural and electrical properties of a La2O3 thin film as a gate dielectric.
Jun JH, et al.
The Journal of the Korean Physical Society, 11(6) (2002)
MOCVD of lanthanum oxides from La (tmhd)3 and La (tmod)3 precursors: A thermal and kinetic investigation.
Bedoya C, et al.
Chem. Vap. Deposition, 12(1), 46-53 (2006)
Study on the precursors for La2O3 thin films deposited on silicon substrate.
Jun J, et al.
Journal of Materials Science Letters, 21(23), 1847-1849 (2002)

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