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204544

Sigma-Aldrich

Tellurium

pieces, 99.999% trace metals basis

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About This Item

Empirical Formula (Hill Notation):
Te
CAS Number:
13494-80-9
Molecular Weight:
127.60
EC Number:
236-813-4
MDL number:
MFCD00134062
UNSPSC Code:
12141913
eCl@ss:
38040201
PubChem Substance ID:
24852275
NACRES:
NA.23

Assay

99.999% trace metals basis

form

pieces

resistivity

5.8-33 μΩ-cm, 20°C

bp

990 °C (lit.)

mp

450 °C (lit.)

density

6.24 g/mL at 25 °C (lit.)

SMILES string

[Te]

InChI

1S/Te

InChI key

PORWMNRCUJJQNO-UHFFFAOYSA-N

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General description

Tellurium is a p-type narrow band gap semiconducting metalloid with excellentphotoconductive and thermoconductive properties. It is widely as a fundamentalconstituent of photovoltaic solar panels, thermoelectronic devices, andalloys.

Application

Tellurium is an essential component for advanced materials including topological insulators such as thermoelectric materials and telluride nanowires. The form of this material is ideally suited for vacuum deposition techniques such as MBE.

Pictograms

Health hazardExclamation mark
GHS08,GHS07

Signal Word

Danger

Hazard Classifications

Acute Tox. 4 Inhalation - Aquatic Chronic 4 - Lact. - Repr. 1B - Skin Sens. 1B

Storage Class Code

6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Guizhong Wang et al.
Optics express, 21(4), 4703-4708 (2013-03-14)
The octave-spanning spectrum was generated in a tellurite glass based microstructured fiber pumped by a 528 MHz repetition rate Yb:fiber ring laser without amplification. The laser achieved 40% output optical-to-optical efficiency with the output power of 410 mW. By adjusting
Zhe Liu et al.
Optics express, 21(6), 7799-7810 (2013-04-03)
ZnTe is an important p-type semiconductor with great applications as field-effect transistors and photodetectors. In this paper, individual ZnTe nanowires based field-effect transistors was fabricated, showing evident p-type conductivity with an effect mobility of 11.3 cm(2)/Vs. Single ZnTe nanowire based
Hridyesh Kumar et al.
Carbohydrate polymers, 97(2), 327-334 (2013-08-06)
The present work describes synthesis of water soluble L-cysteine-functionalized CdTe quantum dots (QDs) with size tunable emission at different time intervals for chitosan based film. The characterization of the synthesized CdTe QDs-chitosan film was made by Fourier transform infrared (FTIR)
Katja C Nowack et al.
Nature materials, 12(9), 787-791 (2013-06-19)
The quantum spin Hall (QSH) state is a state of matter characterized by a non-trivial topology of its band structure, and associated conducting edge channels. The QSH state was predicted and experimentally demonstrated to be realized in HgTe quantum wells.
Edward R T Tiekink
Dalton transactions (Cambridge, England : 2003), 41(21), 6390-6395 (2012-01-19)
Despite being disparaged for their malodorous and toxic demeanour, compounds of selenium, a bio-essential element, and tellurium, offer possibilities as therapeutic agents. Herein, their potential use as drugs, for example, as anti-viral, anti-microbial, anti-inflammatory agents, etc., will be surveyed along
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