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593044

Sigma-Aldrich

Aluminum nitride

nanopowder, <100 nm particle size

Synonym(s):

Aluminium nitride

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About This Item

Linear Formula:
AlN
CAS Number:
24304-00-5
Molecular Weight:
40.99
EC Number:
246-140-8
MDL number:
MFCD00003429
UNSPSC Code:
12352302
PubChem Substance ID:
24881326
NACRES:
NA.23

form

nanopowder

particle size

<100 nm

mp

>2200 °C (lit.)

density

3.26 g/mL at 25 °C (lit.)

SMILES string

N#[Al]

InChI

1S/Al.N

InChI key

PIGFYZPCRLYGLF-UHFFFAOYSA-N

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General description

Aluminum nitride (AlN) is a wide bandgap semiconductor with exceptional thermal conductivity, high electrical insulation, and piezoelectric properties. It is widely used in electronics, such as in high-power and high-frequency devices, as well as in optoelectronics for UV light emitters. Additionally, AlN is utilized in biomedical devices due to its biocompatibility.

Application

  • This review explores the significant properties of aluminum nitride in the context of semiconductor materials, discussing its large bandgap and wide transparency range, which are advantageous for ultraviolet to mid-infrared applications (Li et al., 2021).

Pictograms

Health hazardEnvironment
GHS08,GHS09

Signal Word

Danger

Hazard Statements

H372,H410

Hazard Classifications

Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation

Target Organs

Lungs

Storage Class Code

4.3 - Hazardous materials which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

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Shuangxi Nie et al.
Nanomaterials (Basel, Switzerland), 9(8) (2019-08-07)
Nanocomposites consisting of cellulose nanofibrils (CNFs) and nano-aluminum nitride (AlN) were prepared using a simple vacuum-assisted filtration process. Bleached sugarcane bagasse pulp was treated with potassium hydroxide and sodium chlorite, and was subsequently ultra-finely ground and homogenized to obtain CNFs.
Morphologically selective synthesis of nanocrystalline aluminum nitride.
Haber JA, et al.
Chemistry of Materials, 10(12), 4062-4071 (1998)
Nanocrystalline aluminum nitride: II, sintering and properties.
Panchula ML and Ying JY
American Chemical Science Journal, 86(7), 1121-1127 (2003)
Electrical and thermophysical properties of epoxy/aluminum nitride nanocomposites: Effects of nanoparticle surface modification
Peng W, et al.
Composites Part A: Applied Science and Manufacturing, 41(9), 1201-1209 (2010)
A Lupu et al.
Optics express, 20(11), 12541-12549 (2012-06-21)
The aim of the present paper was to determine the index variation in the GaN/AlN heterostructures related to the population/depletion of the quantum well fundamental state leading to the absorption variation in the spectral domain around 1.5 µm. The variation
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