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Sigma-Aldrich

Methanol

semiconductor grade VLSI PURANAL™ (Honeywell 17744)

Synonym(s):

Methyl alcohol

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About This Item

Linear Formula:
CH3OH
CAS Number:
67-56-1
Molecular Weight:
32.04
Beilstein:
1098229
EC Number:
200-659-6
MDL number:
MFCD00004595
UNSPSC Code:
12352300
PubChem Substance ID:
57649971

grade

semiconductor grade VLSI PURANAL™ (Honeywell 17744)

vapor density

1.11 (vs air)

vapor pressure

410 mmHg ( 50 °C)
97.68 mmHg ( 20 °C)

form

liquid

CofA

specification on request

autoignition temp.

725 °F

expl. lim.

36 %

refractive index

n20/D 1.329 (lit.)

bp

64.7 °C (lit.)

mp

−98 °C (lit.)

density

0.791 g/mL at 25 °C (lit.)

SMILES string

CO

InChI

1S/CH4O/c1-2/h2H,1H3

InChI key

OKKJLVBELUTLKV-UHFFFAOYSA-N

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Application

Semiconductor grade methanol may be used to degas indium antimonide wafers. Poly(amidoamine) (PAMAM) was coupled with carboxylic acid terminated Si surfaces by soaking the Si surfaces in methanol. Methanol may be used to degrease silicon ingots and ribbons. It may be used in the purification of surfactant (sodium diethylhexylsulfosuccinate) and to prepare a colloidal suspension of silicon.

Legal Information

PURANAL is a trademark of Honeywell Specialty Chemicals Seelze GmbH

Signal Word

Danger

Hazard Classifications

Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Flam. Liq. 2 - STOT SE 1

Target Organs

Eyes

Storage Class Code

3 - Flammable liquids

WGK

WGK 2

Flash Point(F)

49.5 °F - closed cup

Flash Point(C)

9.7 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Luminescent colloidal silicon suspensions from porous silicon.
Heinrich JL, et al.
Science, 255, 66-68 (1992)
Investigation of the mobility of amphiphilic polymer?AOT reverse microemulsion systems using electron spin resonance
Wines TH, et al.
Journal of Colloid and Interface Science, 285(1), 318-325 (2005)
LA-ICP-MS, IC and DPASV-DPCSV determination of metallic impurities in solar-grade silicon.
Buldini PL, et al.
Talanta, 47(1), 203-212 (1998)
Immobilization of dendrimers on Si?C linked carboxylic acid-terminated monolayers on silicon (111).
Bocking T, et al.
Thin Solid Films, 515(4), 1857-1863 (2006)
Growth and characterization of indium antimonide and gallium antimonide crystals.
Udayashankar NK and Bhat HL
Bulletin of Materials Science, 24(5), 445-453 (2001)
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