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Sigma-Aldrich

Tetrakis(dimethylamido)hafnium(IV)

packaged for use in deposition systems

Synonym(s):

TDMAH, Tetrakis(dimethylamino)hafnium(IV)

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About This Item

Linear Formula:
[(CH3)2N]4Hf
CAS Number:
19782-68-4
Molecular Weight:
354.79
MDL number:
MFCD01862473
UNSPSC Code:
12352103
PubChem Substance ID:
24884811
NACRES:
NA.23

Assay

≥99.99% (trace metals analysis)

form

low-melting solid

reaction suitability

core: hafnium

mp

26-29 °C (lit.)

density

1.098 g/mL at 25 °C

SMILES string

CN(C)[Hf](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

ZYLGGWPMIDHSEZ-UHFFFAOYSA-N

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General description

Alkyl amides of Hafnium provide a convenient and effective atomic layer deposition precursor to smooth and and amorphous hafnium oxide thin films.

Application

Precursors Packaged for Depositions Systems
Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices.

Pictograms

FlameCorrosion
GHS02,GHS05

Signal Word

Danger

Hazard Statements

H228,H261,H314

Hazard Classifications

Flam. Sol. 1 - Skin Corr. 1B - Water-react 2

Supplementary Hazards

EUH014

Storage Class Code

4.3 - Hazardous materials which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

109.4 °F - closed cup

Flash Point(C)

43 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films
Hausmann DM, Gordon RG
Journal of Crystal Growth, 249, 251-261 (2003)
High Purity Metalorganic Precursors for CPV Device Fabrication
Rushworth S
Material Matters, 5(4) null
Applied Physics Letters, 91, 193503-193503 (2007)
The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition
Monsma D, Becker J
Material Matters, 1(3), 5-5 (2006)

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