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771503

Sigma-Aldrich

Indeno[1,2-b]fluorene-6,12-dione

99%

Synonym(s):

trans-Fluorenacenedione, Indenofluorenedione

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About This Item

Empirical Formula (Hill Notation):
C20H10O2
CAS Number:
5695-13-6
Molecular Weight:
282.29
MDL number:
MFCD22666459
UNSPSC Code:
12352103
PubChem Substance ID:
329767500
NACRES:
NA.23

Assay

99%

form

powder

mp

350-354 °C

SMILES string

O=C1c2ccccc2-c3cc4C(=O)c5ccccc5-c4cc13

InChI

1S/C20H10O2/c21-19-13-7-3-1-5-11(13)15-9-18-16(10-17(15)19)12-6-2-4-8-14(12)20(18)22/h1-10H

InChI key

AAUHGKXJBZEARK-UHFFFAOYSA-N

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Application

Core unit affording n-type organic semiconductors for n-type FET
Indeno[1,2-b]fluorene-6,12-dione is a semiconducting polymer that can be used as an acceptor molecule in the fabrication of organic electronic devices such as organic light emitting diodes (OLEDs) and organic field effect transistors (OFETs).

Pictograms

Exclamation mark
GHS07

Signal Word

Warning

Hazard Statements

H302

Hazard Classifications

Acute Tox. 4 Oral

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificates of Analysis (COA)

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High Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives
Chemistry of Materials, 20, 2615-2617 (2008)
An aromatic imine group enhances the EL efficiency and carrier transport properties of highly efficient blue emitter for OLEDs
Journal of Materials Chemistry, 20, 5930-5936 (2010)
Preparation, physical properties and n-type FET characteristics of substituted diindenopyrazinediones and bis(dicyanomethylene) derivatives
Journal of Materials Chemistry, 22, 4483-4490 (2012)
Preparation, physical properties and n-type FET characteristics of substituted diindenopyrazinediones and bis (dicyanomethylene) derivatives
Nishida J, et al.
Journal of Materials Chemistry, 22(10), 4483-4490 (2012)
High performance n-type field-effect transistors based on indenofluorenedione and diindenopyrazinedione derivatives
Nakagawa T, et al.
Chemistry of Materials, 20(8), 2615-2617 (2008)
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