Saltar al contenido
Merck
Todas las fotos(1)

Documentos

646687

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

Sinónimos:

Silicon element

Iniciar sesiónpara Ver la Fijación de precios por contrato y de la organización
Todas las fotos(1)

About This Item

Fórmula lineal:
Si
Número de CAS:
7440-21-3
Peso molecular:
28.09
EC Number:
231-130-8
MDL number:
MFCD00085311
UNSPSC Code:
12352300
PubChem Substance ID:
24883476
NACRES:
NA.23

form

crystalline (cubic (a = 5.4037))
wafer (single side polished)

does not contain

dopant

diam. × thickness

2 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

semiconductor properties

<100>, N-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

¿Está buscando productos similares? Visita Guía de comparación de productos

Categorías relacionadas

General description

Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

Application

  • Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.: This article addresses the challenges and real-world applications of high-performance silicon anodes in lithium-ion batteries, presenting innovative solutions to enhance their efficiency (Khan et al., 2024).
  • Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.: This research focuses on strain engineering to improve the fabrication of freestanding perovskite oxides, which are crucial for various high-purity silicon applications in academia (Yun et al., 2024).

Physical properties

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

Storage Class

13 - Non Combustible Solids

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

Certificados de análisis (COA)

Busque Certificados de análisis (COA) introduciendo el número de lote del producto. Los números de lote se encuentran en la etiqueta del producto después de las palabras «Lot» o «Batch»

¿Ya tiene este producto?

Encuentre la documentación para los productos que ha comprado recientemente en la Biblioteca de documentos.

Visite la Librería de documentos

Los clientes también vieron

Slide 1 of 8

1 of 8

Silicon dioxide single crystal substrate, optical grade, 99.99% trace metals basis, L × W × thickness 10&#160;mm × 10&#160;mm × 0.5&#160;mm

Sigma-Aldrich

634867

Silicon dioxide

Silicon disks, 13mm, thickness 0.38mm, single crystal, 100%

GF72027266

Silicon

Silicon pieces, 99.95% trace metals basis

Sigma-Aldrich

343250

Silicon

Silicon wafer (single side polished), &#60;111&#62;, N-type, contains phosphorus as dopant, diam. × thickness 2&#160;in. × 0.5&#160;mm

Sigma-Aldrich

647799

Silicon

Silicon disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%

GF46268433

Silicon

Silicon sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%

GF71817543

Silicon

Strontium titanate single crystal substrate, &#60;100&#62;

Sigma-Aldrich

634689

Strontium titanate

Silicon sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%

GF91141792

Silicon

Molecular monolayers on silicon surfaces.
Lopinski GP and Wayner DDM.
Material Matters, 3(2), 38-38 (2008)
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Ver todos los artículos relacionados

Artículos

Molecular Monolayers on Silicon Surfaces

Explore methods for molecular monolayers on silicon surfaces, their properties, and applications in molecular electronics and sensing.

Dye-Sensitized and Perovskite Solar Cells

Continuous efficiency improvements in photovoltaic devices result from material advancements and manufacturing innovation.

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Atomic Layer Deposition of Nanomaterials for Li-Ion Batteries, Fuel Cells, and Solar Cells

Nanomaterials are considered a route to the innovations required for large-scale implementation of renewable energy technologies in society to make our life sustainable.

Protocolos

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Nuestro equipo de científicos tiene experiencia en todas las áreas de investigación: Ciencias de la vida, Ciencia de los materiales, Síntesis química, Cromatografía, Analítica y muchas otras.

Póngase en contacto con el Servicio técnico