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759414

Sigma-Aldrich

Tetraethyl orthosilicate

packaged for use in deposition systems

Synonym(s):

Tetraethyl orthosilicate, Orthosilicic acid tetraethyl ester, Silicon tetraethoxide, Tetraethoxysilane, Tetraethoxysilicon(IV), Tetraethyl silicate, TEOS

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About This Item

Linear Formula:
Si(OC2H5)4
CAS Number:
Molecular Weight:
208.33
Beilstein:
1422225
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

vapor density

7.2 (vs air)

vapor pressure

<1 mmHg ( 20 °C)

Assay

≥99.5% (GC)

form

liquid

refractive index

n20/D 1.382 (lit.)

bp

168 °C (lit.)

density

0.933 g/mL at 20 °C (lit.)

SMILES string

CCO[Si](OCC)(OCC)OCC

InChI

1S/C8H20O4Si/c1-5-9-13(10-6-2,11-7-3)12-8-4/h5-8H2,1-4H3

InChI key

BOTDANWDWHJENH-UHFFFAOYSA-N

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Application

Tetraethyl orthosilicate (TEOS) is an oxygen containing precursor of Si used for the deposition of:
  • Si oxide
  • Oxycarbide
  • Doped silicate
  • Silanol
  • Siloxane polymer
  • Organosilicon thin films

The films can be deposited at low temperatues (<250 °C). TEOS is also used to deposit mesoporous and nanoporous thin films of silica. These porous films can be doped during deposition to further enhance their properties.
Commonly used as a precursor to prepare xerogel
Will interact with dodecylamine in the formation of intercalation compounds of H+-magadiite and used in a study of mixed-metal bioactive glasses.

Pictograms

FlameExclamation mark

Signal Word

Warning

Hazard Statements

Hazard Classifications

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Liq. 3 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

3 - Flammable liquids

WGK

WGK 1

Flash Point(F)

113.0 °F - closed cup

Flash Point(C)

45 °C - closed cup


Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Journal of the American Chemical Society, 128(49), 15714-15721 (2006-12-07)
Thin films of silicon-doped Fe2O3 were deposited by APCVD (atmospheric pressure chemical vapor deposition) from Fe(CO)5 and TEOS (tetraethoxysilane) on SnO2-coated glass at 415 degrees C. HRSEM reveals a highly developed dendritic nanostructure of 500 nm thickness having a feature
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