920924
Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer
diam. 200 mm (8 in.)
Synonym(s):
Boronitrene, Hexagonal boron nitride monolayer, Single-layer hexagonal boron nitride, White graphene
About This Item
description
Bandgap: 5.97 eV
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Monolayer h-BN
Orientation: <1-0-0>
Raman Peak: 1370 /cm-1
Substrate Type/Doping: P/B
hBN Coverage: 100% with sporadic adlayers
Quality Level
resistivity
5-30 Ω-cm
diam.
200 mm (8 in.)
thickness
300 nm , Oxide
725 ± 25 μm , Wafer
grain size
>4 μm
InChI
1S/BN/c1-2
InChI key
PZNSFCLAULLKQX-UHFFFAOYSA-N
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Application
- Two-dimensional electronics
- Nanophotonic and other optoelectronic devices
- Quantum communication and information science
- Aerospace industry
- MEMS and NEMS
- Micro-/nano- actuators
- nsulating/transparent coatings
Storage and Stability
Storage Class Code
13 - Non Combustible Solids
WGK
WGK 3
Certificates of Analysis (COA)
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