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553131

Sigma-Aldrich

Tetrakis(ethylmethylamido)zirconium(IV)

≥99.99% trace metals basis

Synonym(s):

TEMAZ, Tetrakis(ethylmethylamino)zirconium(IV)

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About This Item

Linear Formula:
Zr(NCH3C2H5)4
CAS Number:
175923-04-3
Molecular Weight:
323.63
MDL number:
MFCD03427131
UNSPSC Code:
12352103
PubChem Substance ID:
24879307
NACRES:
NA.23

Quality Level

200

Assay

≥99.99% trace metals basis

form

liquid

reaction suitability

core: zirconium

bp

81 °C/0.1 mmHg (lit.)

density

1.049 g/mL at 25 °C (lit.)

SMILES string

CCN(C)[Zr](N(C)CC)(N(C)CC)N(C)CC

InChI

1S/4C3H8N.Zr/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

InChI key

SRLSISLWUNZOOB-UHFFFAOYSA-N

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Application

Tetrakis(ethylmethylamido)zirconium(IV) can be used as a precursor for atomic layer deposition of zirconium fluoride. These metal fluorides are applied in the field of catalysis, optical films, and protective coatings for Li-ion battery electrodes.

accessory

Product No.
Description
Pricing

Pictograms

FlameExclamation mark
GHS02,GHS07

Signal Word

Danger

Hazard Statements

H225,H261,H315,H319,H335

Hazard Classifications

Eye Irrit. 2 - Flam. Liq. 2 - Skin Irrit. 2 - STOT SE 3 - Water-react 2

Target Organs

Respiratory system

Storage Class Code

4.3 - Hazardous materials which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

50.0 °F - closed cup

Flash Point(C)

10 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
SHBN5343
SHBM5511
SHBL3495
SHBF6263V
SHBD9953V

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ZrO2 monolayer as a removable etch stop layer for thermal Al2O3 atomic layer etching using hydrogen fluoride and trimethylaluminum
David R Zywotko, et al.
Chemistry of Materials, 32, 10055-10065 (2020)
Atomic layer deposition of metal fluorides using HF-pyridine as the fluorine precursor
Younghee Lee, et al.
Chemistry of Materials, 28, 2022-2032 (2016)

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