215619
Silicon
powder, −325 mesh, 99% trace metals basis
Sign Into View Organizational & Contract Pricing
All Photos(4)
About This Item
Linear Formula:
Si
CAS Number:
Molecular Weight:
28.09
EC Number:
MDL number:
UNSPSC Code:
12141911
PubChem Substance ID:
NACRES:
NA.23
Recommended Products
Assay
99% trace metals basis
form
powder
particle size
−325 mesh
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Looking for similar products? Visit Product Comparison Guide
Related Categories
General description
Silicon powder is a fine, gray powder. This silicon powder has been passed through a 325-mesh screen, meaning that the particles are small enough to pass through a sieve with openings that are approximately 44 thousandths of an inch in diameter. Silicon is a chemical element and is a hard, brittle, metallic-gray solid that is highly resistant to chemical attack and has a high melting point. Silicon is the second most abundant element in the Earth’s crust and is found in a variety of minerals.
Application
Silicon can be used as anode material in lithium-ion batteries.
It can be used to fabricate Al2O3-C refractories. The silicon powder generates β-Sialon whiskers which imparts high-temperature strength, slag resistance and thermal shock resistance of the refractories.
It can be incorporated into high-densitypolyethylene (HDPE) polymer composites. The addition of silicon powder enhancesthermal stability and thermal conductivity of composites.
It can be used to fabricate Al2O3-C refractories. The silicon powder generates β-Sialon whiskers which imparts high-temperature strength, slag resistance and thermal shock resistance of the refractories.
It can be incorporated into high-densitypolyethylene (HDPE) polymer composites. The addition of silicon powder enhancesthermal stability and thermal conductivity of composites.
Signal Word
Warning
Hazard Statements
Precautionary Statements
Hazard Classifications
Flam. Sol. 2
Storage Class Code
4.1B - Flammable solid hazardous materials
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Certificates of Analysis (COA)
Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.
Customers Also Viewed
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Min Joon Huang et al.
Journal of nanoscience and nanotechnology, 13(6), 3810-3817 (2013-07-19)
In this work, we demonstrated a silicon nanowire (SiNW) biosensing platform capable of simultaneously identifying different Dengue serotypes on a single sensing chip. Four peptide nucleic acids (PNAs), specific to each Dengue serotypes (DENV-1 to DENV-4), were spotted on different
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.
Contact Technical Service