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描述
Crystallographic D spacing ((0001) - c plane: 2.165 Angstrom)
Crystallographic D spacing ((1011) - s plane: 1.961 Angstrom)
Crystallographic D spacing ((1040) - m plane: 1.375 Angstrom)
Crystallographic D spacing ((1102) - r plane: 1.740 Angstrom)
Crystallographic D spacing ((1120) - a plane: 2.379 Angstrom)
Crystallographic D spacing ((1123) - n plane: 1.147 Angstrom)
single side polished
品質等級
形狀
single crystal substrate
硬度
9 mohs
長度 × 寬度 × 厚度
10 mm × 10 mm × 0.5 mm
mp
2040 °C (lit.)
半導體屬性
<0001>
SMILES 字串
O=[Al]O[Al]=O
InChI
1S/2Al.3O
InChI 密鑰
TWNQGVIAIRXVLR-UHFFFAOYSA-N
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特點和優勢
物理性質
外觀
儲存類別代碼
13 - Non Combustible Solids
水污染物質分類(WGK)
nwg
閃點(°F)
Not applicable
閃點(°C)
Not applicable
個人防護裝備
Eyeshields, Gloves, type N95 (US)
商品
Continuous efficiency improvements in photovoltaic devices result from material advancements and manufacturing innovation.
Continuous efficiency improvements in photovoltaic devices result from material advancements and manufacturing innovation.
Continuous efficiency improvements in photovoltaic devices result from material advancements and manufacturing innovation.
Continuous efficiency improvements in photovoltaic devices result from material advancements and manufacturing innovation.
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