推荐产品
蒸汽壓力
<0.01 mmHg ( 25 °C)
品質等級
化驗
99.995% trace metals basis
形狀
wire
電阻係數
8.37 μΩ-cm
直徑
0.45-0.55 mm
mp
156.6 °C (lit.)
密度
7.3 g/mL at 25 °C (lit.)
SMILES 字串
[In]
InChI
1S/In
InChI 密鑰
APFVFJFRJDLVQX-UHFFFAOYSA-N
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數量
2.8g = 2m；14g = 10m
訊號詞
Danger
危險聲明
危險分類
STOT RE 1 Inhalation
標靶器官
Lungs
儲存類別代碼
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
水污染物質分類（WGK）
WGK 1
閃點（°F）
Not applicable
閃點（°C）
Not applicable
個人防護裝備
dust mask type N95 (US), Eyeshields, Gloves
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Ray-Hua Horng et al.
Optics express, 21 Suppl 1, A1-A6 (2013-02-15)
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
Yuji Zhao et al.
Optics express, 21 Suppl 1, A53-A59 (2013-02-15)
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
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