推荐产品
蒸汽壓力
<0.01 mmHg ( 25 °C)
品質等級
化驗
99.995% trace metals basis
形狀
wire
電阻係數
8.37 μΩ-cm
直徑
0.45-0.55 mm
mp
156.6 °C (lit.)
密度
7.3 g/mL at 25 °C (lit.)
SMILES 字串
[In]
InChI
1S/In
InChI 密鑰
APFVFJFRJDLVQX-UHFFFAOYSA-N
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數量
2.8g = 2m;14g = 10m
訊號詞
Danger
危險聲明
危險分類
STOT RE 1 Inhalation
標靶器官
Lungs
儲存類別代碼
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
水污染物質分類(WGK)
WGK 1
閃點(°F)
Not applicable
閃點(°C)
Not applicable
個人防護裝備
dust mask type N95 (US), Eyeshields, Gloves
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Optics express, 21 Suppl 1, A1-A6 (2013-02-15)
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
Optics express, 21 Suppl 1, A53-A59 (2013-02-15)
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
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