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215619

Sigma-Aldrich

硅

powder, −325 mesh, 99% trace metals basis

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About This Item

线性分子式:
Si
CAS号:
7440-21-3
分子量:
28.09
EC 号:
231-130-8
MDL编号:
MFCD00085311
UNSPSC代码:
12141911
PubChem化学物质编号:
24852908
NACRES:
NA.23

质量水平

100

方案

99% trace metals basis

表单

powder

粒径

−325 mesh

沸点

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

SMILES字符串

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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相关类别

一般描述

硅粉是精细的灰色粉末。这款硅粉经过325目大小筛分，即粉末颗粒小到可以通过孔径约为44 mil（1 mil=千分之一英寸）的筛子。 硅是一种化学元素，为坚硬易碎的银灰色固体，具有高耐化学侵蚀性和高熔点。硅是地壳第二大丰富元素，存在于多种矿物中。

应用

硅可用作 锂离子电池的负极(anode)材料。

可用于制造Al2O3-C 耐火材料。 硅粉可制成β-Sialon晶须， 赋予耐火材料高温强度、 抗渣性和抗热震性。

硅粉可掺入高密度聚乙烯(HDPE)高分子复合材料，增强复合材料的热稳定性和热导率。

象形图

Flame
GHS02

警示用语：

Warning

危险声明

H228

危险分类

Flam. Sol. 2

储存分类代码

4.1B - Flammable solid hazardous materials

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCT8391
MKCR9919
MKCP7149
MKCK6629
MKCG5658

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硅 powder, 45 max. part. size (micron), weight 100 g, high purity 99.998%

GF64953614

硅

硅 powder, max. particle size 45 micron, weight 50 g, high purity 99.998%

GF46525620

硅

硅 powder, 150 max. part. size (micron), weight 200 g, purity 97.5%

GF63403152

硅

一氧化硅 powder, −325 mesh

Sigma-Aldrich

262951

一氧化硅

Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
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