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366870

Sigma-Aldrich

Indium(III) phosphide

pieces, 3-20 mesh, 99.998% trace metals basis

Synonym(s):

Indium monophosphide, Indium phosphide

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About This Item

Linear Formula:
InP
CAS Number:
22398-80-7
Molecular Weight:
145.79
EC Number:
244-959-5
MDL number:
MFCD00016153
UNSPSC Code:
12352300
PubChem Substance ID:
24862718
NACRES:
NA.23

Quality Level

100

Assay

99.998% trace metals basis

form

pieces

reaction suitability

reagent type: catalyst
core: indium

particle size

3-20 mesh

SMILES string

P#[In]

InChI

1S/In.P

InChI key

GPXJNWSHGFTCBW-UHFFFAOYSA-N

Pictograms

Health hazard
GHS08

Signal Word

Danger

Hazard Statements

H350,H361,H372

Precautionary Statements

P201 - P308 + P313

Hazard Classifications

Carc. 1B - Repr. 2 - STOT RE 1

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificates of Analysis (COA)

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Hidetaka Asoh et al.
Nanotechnology, 23(21), 215304-215304 (2012-05-04)
To fabricate ordered geometric patterns consisting of InP nanoporous structures, a photoresist mask with periodic opening arrays was prepared by sphere photolithography. The diameter and interval of the openings of the photoresist mask could be controlled independently by adjusting the
Wenyong Liu et al.
Journal of the American Chemical Society, 135(4), 1349-1357 (2012-12-27)
In this work, we synthesized InP and InAs nanocrystals (NCs) capped with different inorganic ligands, including various molecular metal chalcogenide complexes (MCCs) and chalcogenide ions. We found that MCCs and chalcogenide ions can quantitatively displace organic ligands from the surface
Lorenzo Romeo et al.
Nano letters, 12(9), 4490-4494 (2012-08-02)
Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport
Martin Hjort et al.
ACS nano, 6(11), 9679-9689 (2012-10-16)
Using both synchrotron-based photoemission electron microscopy/spectroscopy and scanning tunneling microscopy/spectroscopy, we obtain a complete picture of the surface composition, morphology, and electronic structure of InP nanowires. Characterization is done at all relevant length scales from micrometer to nanometer. We investigate
Kouta Tateno et al.
Nano letters, 12(6), 2888-2893 (2012-05-19)
We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that
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