790346
ITO
30 nm (SEM)
Synonym(s):
Indium tin oxide, ITO
About This Item
Recommended Products
form
nanopowder
Quality Level
composition
In2O3, 90%
SnO2, 10%
particle size
30 nm (SEM)
mp
1910 °C (lit.)
density
1.2 g/mL at 25 °C (lit.)
SMILES string
O=[SnH2].O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O
InChI
1S/2In.5O.Sn
InChI key
LNNWKAUHKIHCKO-UHFFFAOYSA-N
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Related Categories
Application
- transparent electrodes(1)
- the formation of conductive paper and organic contaminants (2)
- the formation of transparent conductive oxide films and magnetic nanocomposites(3)
- electrochromic materials and as well as in biomedical applications(4)
Storage Class Code
13 - Non Combustible Solids
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Certificates of Analysis (COA)
Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.
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Articles
TiO2 exhibits wide band gap semiconductor and memristor properties electronically, with high opacity and UV absorbance optically.
TiO2 exhibits wide band gap semiconductor and memristor properties electronically, with high opacity and UV absorbance optically.
TiO2 exhibits wide band gap semiconductor and memristor properties electronically, with high opacity and UV absorbance optically.
TiO2 exhibits wide band gap semiconductor and memristor properties electronically, with high opacity and UV absorbance optically.
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