593044
Aluminum nitride
nanopowder, <100 nm particle size
Synonym(s):
Aluminium nitride
Sign Into View Organizational & Contract Pricing
All Photos(3)
About This Item
Linear Formula:
AlN
CAS Number:
Molecular Weight:
40.99
EC Number:
MDL number:
UNSPSC Code:
12352302
PubChem Substance ID:
NACRES:
NA.23
Recommended Products
form
nanopowder
Quality Level
particle size
<100 nm
mp
>2200 °C (lit.)
density
3.26 g/mL at 25 °C (lit.)
SMILES string
N#[Al]
InChI
1S/Al.N
InChI key
PIGFYZPCRLYGLF-UHFFFAOYSA-N
Looking for similar products? Visit Product Comparison Guide
General description
Aluminum nitride (AlN) is a wide bandgap semiconductor with exceptional thermal conductivity, high electrical insulation, and piezoelectric properties. It is widely used in electronics, such as in high-power and high-frequency devices, as well as in optoelectronics for UV light emitters. Additionally, AlN is utilized in biomedical devices due to its biocompatibility.
Application
- This review explores the significant properties of aluminum nitride in the context of semiconductor materials, discussing its large bandgap and wide transparency range, which are advantageous for ultraviolet to mid-infrared applications (Li et al., 2021).
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation
Target Organs
Lungs
Storage Class Code
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Choose from one of the most recent versions:
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.
Customers Also Viewed
Shuangxi Nie et al.
Nanomaterials (Basel, Switzerland), 9(8) (2019-08-07)
Nanocomposites consisting of cellulose nanofibrils (CNFs) and nano-aluminum nitride (AlN) were prepared using a simple vacuum-assisted filtration process. Bleached sugarcane bagasse pulp was treated with potassium hydroxide and sodium chlorite, and was subsequently ultra-finely ground and homogenized to obtain CNFs.
Morphologically selective synthesis of nanocrystalline aluminum nitride.
Haber JA, et al.
Chemistry of Materials, 10(12), 4062-4071 (1998)
Nanocrystalline aluminum nitride: II, sintering and properties.
Panchula ML and Ying JY
American Chemical Science Journal, 86(7), 1121-1127 (2003)
Electrical and thermophysical properties of epoxy/aluminum nitride nanocomposites: Effects of nanoparticle surface modification
Peng W, et al.
Composites Part A: Applied Science and Manufacturing, 41(9), 1201-1209 (2010)
Ruyen Ro et al.
IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 57(1), 46-51 (2009-12-31)
In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al
Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.
Contact Technical Service