Skip to Content
Merck
All Photos(2)

Documents

366870

Sigma-Aldrich

Indium(III) phosphide

pieces, 3-20 mesh, 99.998% trace metals basis

Synonym(s):

Indium monophosphide, Indium phosphide

Sign Into View Organizational & Contract Pricing
All Photos(2)

About This Item

Linear Formula:
InP
CAS Number:
22398-80-7
Molecular Weight:
145.79
EC Number:
244-959-5
MDL number:
MFCD00016153
UNSPSC Code:
12352300
PubChem Substance ID:
24862718
NACRES:
NA.23

Quality Level

100

Assay

99.998% trace metals basis

form

pieces

reaction suitability

reagent type: catalyst
core: indium

particle size

3-20 mesh

SMILES string

P#[In]

InChI

1S/In.P

InChI key

GPXJNWSHGFTCBW-UHFFFAOYSA-N

Pictograms

Health hazard
GHS08

Signal Word

Danger

Hazard Statements

H350,H361,H372

Precautionary Statements

P201 - P308 + P313

Hazard Classifications

Carc. 1B - Repr. 2 - STOT RE 1

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Vasilis Katopodis et al.
Optics express, 20(27), 28538-28543 (2012-12-25)
We demonstrate the first integrated transmitter for serial 100 Gb/s NRZ-OOK modulation in datacom and telecom applications. The transmitter relies on the use of an electro-optic polymer modulator and the hybrid integration of an InP laser diode and InP-DHBT electronics
Jens Hofrichter et al.
Optics express, 20(9), 9363-9370 (2012-04-27)
We report on the modulation characteristics of indium phosphide (InP) based microdisks heterogeneously integrated on a silicon-on-insulator (SOI) waveguide. We present static extinction ratios and dynamic operation up to 10 Gb/s. Operation with a bit-error rate below 1 × 10(-9)
Myung-Joon Kwack et al.
Optics express, 20(27), 28734-28741 (2012-12-25)
A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters
Xuan Zhang et al.
Nanotechnology, 23(27), 275103-275103 (2012-06-20)
Direct comparisons of different types of nanoparticles for drug delivery have seldom been performed. In this study we compare the physical properties and cellular activity of doxorubicin (Dox) conjugates to gold nanoparticles (Au) and InP quantum dots of comparable diameter.
Hidetaka Asoh et al.
Nanotechnology, 23(21), 215304-215304 (2012-05-04)
To fabricate ordered geometric patterns consisting of InP nanoporous structures, a photoresist mask with periodic opening arrays was prepared by sphere photolithography. The diameter and interval of the openings of the photoresist mask could be controlled independently by adjusting the
View All Related Papers

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service