357294
Indium
foil, thickness 0.25 mm, 99.99% trace metals basis
Synonym(s):
Indium element
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About This Item
Empirical Formula (Hill Notation):
In
CAS Number:
Molecular Weight:
114.82
EC Number:
MDL number:
UNSPSC Code:
12141719
PubChem Substance ID:
NACRES:
NA.23
Recommended Products
vapor pressure
<0.01 mmHg ( 25 °C)
Quality Level
Assay
99.99% trace metals basis
form
foil
resistivity
8.37 μΩ-cm
thickness
0.25 mm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
SMILES string
[In]
InChI
1S/In
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
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General description
Indium foil is widely used in nuclear facilities to capture thermal neutrons, because it shows a high cross section of neutron capture reaction. Hence, it may be used in dosemeters to measure exposure. Indium foils were studied for simultaneous monitoring neutron and photon intensities in a reactor core.
Application
- High sodium ionic conductivity in PEO/PVP solid polymer electrolytes with InAs nanowire fillers.: Explores the enhancement of ionic conductivity in polymer electrolytes through the incorporation of indium arsenide nanowires, offering significant implications for battery efficiency ( Devi et al., 2021).
- A Corrosion-Resistant and Dendrite-Free Zinc Metal Anode in Aqueous Systems.: Introduces a corrosion-resistant indium-containing anode design for aqueous batteries, which prevents dendrite formation and enhances overall battery safety ( Han et al., 2020).
Quantity
- 50 × 50 mm (approximately 4.6 g)
- 100 × 100 mm (approximately 18.4 g)
- 150 × 150 mm (approximately 41.4 g)
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
STOT RE 1 Inhalation
Target Organs
Lungs
Storage Class Code
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
WGK
WGK 1
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Recalibration of Indium foil for personnel screening in criticality accidents
Takada C, et al.
Radiation Protection Dosimetry, 144(1-4), 575-579 (2010)
Activation detection using indium foils for simultaneous monitoring neutron and photon intensities in a reactor core.
Chao JH and Chiang AC
Radiation Measurements, 45, 1024-1033 (2010)
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
Yuji Zhao et al.
Optics express, 21 Suppl 1, A53-A59 (2013-02-15)
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
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