483591
Diamond
synthetic monocrystalline powder, ≤1 μm
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About This Item
Empirical Formula (Hill Notation):
C
CAS Number:
Molecular Weight:
12.01
EC Number:
MDL number:
UNSPSC Code:
12352103
NACRES:
NA.23
Recommended Products
form
synthetic monocrystalline powder
Quality Level
particle size
≤1 μm
density
3.5 g/mL at 25 °C (lit.)
application(s)
battery manufacturing
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Related Categories
Application
Monocrystalline diamond particles internalized in human endothelial cells have potential applications in drug delivery.
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Micron-sized diamond particles are internalized by endothelial cells.
Walkowiak B, et al.
Diamond and Related Materials, 18, 651-656 (2009)
Jayakumar Shalini et al.
Nanoscale, 5(3), 1159-1167 (2013-01-05)
Significant difference was observed for the simultaneous detection of dopamine (DA), ascorbic acid (AA), and uric acid (UA) mixture using nitrogen incorporated diamond nanowire (DNW) film electrodes grown by microwave plasma enhanced chemical vapor deposition. For the simultaneous sensing of
Mikhail V Korobov et al.
Nanoscale, 5(4), 1529-1536 (2013-01-15)
Detonation nanodiamond (ND) is a suitable source material to produce unique samples consisting of almost uniform diamond nanocrystals (d = 3-5 nm). Such samples exist in the form of long stable aqueous dispersions with narrow size distribution of diamond particles.
Brian McCall et al.
Optics express, 21(3), 3557-3572 (2013-03-14)
A novel method for fabricating lens arrays and other non-rotationally symmetric free-form optics is presented. This is a diamond machining technique using 4 controlled axes of motion - X, Y, Z, and C. As in 3-axis diamond micro-milling, a diamond
Pontus Forsberg et al.
Optics express, 21(3), 2693-2700 (2013-03-14)
Control of the sidewall angle of diamond microstructures was achieved by varying the gas mixture, bias power and mask shape during inductively coupled plasma etching. Different etch mechanisms were responsible for the angle of the lower and upper part of
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