685070
Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene]
99.9%
Synonyme(s) :
F8T2, Poly(9,9-dioctylfluorene-alt-bithiophene), Poly[[2,2′-bithiophene]-5,5′-diyl(9,9-dioctyl-9H-fluorene-2,7-diyl)]
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About This Item
Formule linéaire :
(C37H44S2)n(C8H9)2
Numéro CAS:
Code UNSPSC :
12352103
Nomenclature NACRES :
NA.23
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Niveau de qualité
Pureté
99.9%
Forme
powder
Poids mol.
average Mn >20,000
Fluorescence
λex 400 nm; λem 497 nm in chloroform (at Mn = 20,000)
Propriétés du semi-conducteur
P-type (mobility=5×10−3 cm2/V·s)
Catégories apparentées
Description générale
F8T2 is a fluorenated semiconducting polymer which can be used as a hole transporting layer with mobility of 0.02cm2V-1s-1. It is highly stable in vacuum and UV based environment. Its liquid crystallinity allows it to form a self-ordered nanostructure on organic thin films.
Typically soluble in THF, Dichloromethane, or Tolune. (c = 1%, typical appearance may be clear to turbid).
Polymer is end-capped with 3,5-dimethylbenzene.
Polymer is end-capped with 3,5-dimethylbenzene.
Application
F8T2 can be majorly used in the fabrication of active layers for optoelectronics and energy based devices such as organic field effect transistors(OFETs), solar cells, light emitting diodes(LEDs) and electronic gas sensors.
Code de la classe de stockage
11 - Combustible Solids
Classe de danger pour l'eau (WGK)
WGK 3
Point d'éclair (°F)
Not applicable
Point d'éclair (°C)
Not applicable
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Accelerating gas adsorption on 3D percolating carbon nanotubes.
Li H, et al.
Scientific Reports, 6(13), 21313-21313 (2016)
Organic/inorganic F8T2/GaN light emitting heterojunction.
Wu YJ, et al.
Organic Electronics, 49(3), 64-68 (2017)
Natalie Stutzmann et al.
Science (New York, N.Y.), 299(5614), 1881-1884 (2003-03-22)
The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar
Preparation of active layer of solar cells device by F8T2 blending with PCBM
CPMT Symposium Japan, 2010 IEEE, 3(13), 1-4 (2010)
Photovoltaic properties and charge dynamics in nanophase-separated F8T2/PCBM blend films.
Yasuda T, et al.
J. Photopolym. Sci. Technol., 25(3), 271-276 (2012)
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