496863
Pentakis(dimethylamino)tantalum(V)
99.99%
Synonym(s):
PDMAT, TADMA, Ta(NMe2)5, Tantalum dimethylamide
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About This Item
Recommended Products
Quality Level
Assay
99.99%
form
solid
reaction suitability
core: tantalum
reagent type: catalyst
mp
100 °C (dec.) (lit.)
SMILES string
CN(C)[Ta](N(C)C)(N(C)C)(N(C)C)N(C)C
InChI
1S/5C2H6N.Ta/c5*1-3-2;/h5*1-2H3;/q5*-1;+5
InChI key
VSLPMIMVDUOYFW-UHFFFAOYSA-N
General description
Atomic number of base material: 73 Tantalum
Features and Benefits
Volatile solid CVD precursor to tantalum nitride (TaN) thin films. Also yields tantalum oxide (Ta2O5) thin films when O2, H2O, NO or H2O2 is present during the deposition process. Ta2O5 thins films show promise as gate dielectric materials in the manufacture of integrated circuits.
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Eye Dam. 1 - Flam. Sol. 1 - Skin Corr. 1B - Water-react 1
Storage Class Code
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Applied spectroscopy, 74(10), 1219-1229 (2019-10-17)
A nondispersive infrared gas analyzer was demonstrated for investigating metal alkylamide precursor delivery for microelectronics vapor deposition processes. The nondispersive infrared analyzer was designed to simultaneously measure the partial pressure of pentakis(dimethylamido) tantalum, a metal precursor employed in high volume
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