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Wichtige Dokumente
263230
Germanium
chips, 99.999% trace metals basis
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Alle Fotos(3)
About This Item
Empfohlene Produkte
Qualitätsniveau
Assay
99.999% trace metals basis
Form
chips
Widerstandsfähigkeit
53 Ω-cm, 20°C
bp
2830 °C (lit.)
mp (Schmelzpunkt)
937 °C (lit.)
Dichte
5.35 g/mL at 25 °C (lit.)
SMILES String
[Ge]
InChI
1S/Ge
InChIKey
GNPVGFCGXDBREM-UHFFFAOYSA-N
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Verwandte Kategorien
Lagerklassenschlüssel
13 - Non Combustible Solids
WGK
WGK 3
Flammpunkt (°F)
Not applicable
Flammpunkt (°C)
Not applicable
Persönliche Schutzausrüstung
dust mask type N95 (US), Eyeshields, Gloves
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Physical chemistry chemical physics : PCCP, 15(14), 4955-4964 (2013-02-27)
The electrodeposition of germanium from the ionic liquid 1-butyl-1-methylpyrrolidinium dicyanamide ([BMP][DCA]) and a mixture of [BMP][DCA] and 1-butyl-1-methylpyrrolidinium chloride ([BMP]Cl) was studied using cyclic voltammetry and using an electrochemical quartz crystal microbalance (EQCM). [GeCl4(BuIm)2] (BuIm = N-butylimidazole) was used as
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 075804-075804 (2013-01-25)
The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi(4)Te(7), GeSb(4)Te(7) and Ge(Bi(1-x)Sb(x))(4)Te(7) solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved
Dalton transactions (Cambridge, England : 2003), 42(16), 5812-5817 (2013-03-05)
An unprecedented organic-inorganic hybrid germanoniobate compound Na4[Cu(en)2(H2O)2]5[Na6Ge8Nb32O108H8(OH)4]·41H2O (1) was synthesized under the hydrothermal condition. In compound 1, the {Nb16} cage containing four {GeO4} tetrahedra in its internal cavity results in a heteropolyniobate anion [H4Ge4Nb16O54(OH)2](10-) ({Ge4Nb16}), which is connected by a
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035403-035403 (2012-12-15)
We report an ab initio study of the semiconducting Mg(2)X (with X = Si, Ge) compounds and in particular we analyze the formation energies of the different point defects with the aim of understanding the intrinsic doping mechanisms. We find that the
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035401-035401 (2012-12-15)
The response of three covalent crystals with a diamond lattice (C, Si and Ge) to uniaxial and a special triaxial (generally nonhydrostatic) loading is calculated from first principles. The lattice deformations are described in terms of variations of bond lengths
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