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647705

Sigma-Aldrich

Silicon

wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

Synonym(s):

Silicon element

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About This Item

Linear Formula:
Si
CAS Number:
7440-21-3
Molecular Weight:
28.09
MDL number:
MFCD00085311
UNSPSC Code:
12352300
PubChem Substance ID:
24883420
NACRES:
NA.23

form

crystalline (cubic (a = 5.4037))
wafer

Quality Level

100

contains

boron as dopant

diam. × thickness

2 in. × 0.3 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

semiconductor properties

<111>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Physical properties

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
MKCL1888
MKCH9674
MKCD3690
MKBX1011V
MKBV5800V

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Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
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