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685070

Sigma-Aldrich

F8T2

99.9%

Synonym(s):

Poly(9,9-dioctylfluorene-alt-bithiophene), Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene], Poly[[2,2′-bithiophene]-5,5′-diyl(9,9-dioctyl-9H-fluorene-2,7-diyl)]

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About This Item

Linear Formula:
(C37H44S2)n(C8H9)2
CAS Number:
210347-56-1
UNSPSC Code:
12352103
NACRES:
NA.23

Assay

99.9%

form

powder

mol wt

average Mn >20,000

fluorescence

λex 400 nm; λem 497 nm in chloroform (at Mn = 20,000)

semiconductor properties

P-type (mobility=5×10−3 cm2/V·s)

Related Categories

General description

F8T2 is a fluorenated semiconducting polymer which can be used as a hole transporting layer with mobility of 0.02cm2V-1s-1. It is highly stable in vacuum and UV based environment. Its liquid crystallinity allows it to form a self-ordered nanostructure on organic thin films.
Typically soluble in THF, Dichloromethane, or Tolune. (c = 1%, typical appearance may be clear to turbid).
Polymer is end-capped with 3,5-dimethylbenzene.

Application

F8T2 can be majorly used in the fabrication of active layers for optoelectronics and energy based devices such as organic field effect transistors(OFETs), solar cells, light emitting diodes(LEDs) and electronic gas sensors.

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Photovoltaic properties and charge dynamics in nanophase-separated F8T2/PCBM blend films.
Yasuda T, et al.
J. Photopolym. Sci. Technol., 25(3), 271-276 (2012)
Structural ordering in F8T2 polyfluorene thin film transistors.
Organic Field Effect Transistors II, 5217, 35-43 (2003)
Accelerating gas adsorption on 3D percolating carbon nanotubes.
Li H, et al.
Scientific Reports, 6(13), 21313-21313 (2016)
Natalie Stutzmann et al.
Science (New York, N.Y.), 299(5614), 1881-1884 (2003-03-22)
The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar
Organic/inorganic F8T2/GaN light emitting heterojunction.
Wu YJ, et al.
Organic Electronics, 49(3), 64-68 (2017)
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