685070
F8T2
99.9%
Synonym(s):
Poly(9,9-dioctylfluorene-alt-bithiophene), Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene], Poly[[2,2′-bithiophene]-5,5′-diyl(9,9-dioctyl-9H-fluorene-2,7-diyl)]
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About This Item
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Quality Level
Assay
99.9%
form
powder
mol wt
average Mn >20,000
fluorescence
λex 400 nm; λem 497 nm in chloroform (at Mn = 20,000)
semiconductor properties
P-type (mobility=5×10−3 cm2/V·s)
Related Categories
General description
F8T2 is a fluorenated semiconducting polymer which can be used as a hole transporting layer with mobility of 0.02cm2V-1s-1. It is highly stable in vacuum and UV based environment. Its liquid crystallinity allows it to form a self-ordered nanostructure on organic thin films.
Typically soluble in THF, Dichloromethane, or Tolune. (c = 1%, typical appearance may be clear to turbid).
Polymer is end-capped with 3,5-dimethylbenzene.
Polymer is end-capped with 3,5-dimethylbenzene.
Application
F8T2 can be majorly used in the fabrication of active layers for optoelectronics and energy based devices such as organic field effect transistors(OFETs), solar cells, light emitting diodes(LEDs) and electronic gas sensors.
Storage Class Code
11 - Combustible Solids
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
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Organic/inorganic F8T2/GaN light emitting heterojunction.
Wu YJ, et al.
Organic Electronics, 49(3), 64-68 (2017)
Accelerating gas adsorption on 3D percolating carbon nanotubes.
Li H, et al.
Scientific Reports, 6(13), 21313-21313 (2016)
Natalie Stutzmann et al.
Science (New York, N.Y.), 299(5614), 1881-1884 (2003-03-22)
The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar
Preparation of active layer of solar cells device by F8T2 blending with PCBM
CPMT Symposium Japan, 2010 IEEE, 3(13), 1-4 (2010)
Morana, M.; Bret, G.; Brabec, C.
Applied Physics Letters, 87, 153511-153511 (2005)
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