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14509

Sigma-Aldrich

Tin

≥99%, powder

Synonym(s):

Sn

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About This Item

Empirical Formula (Hill Notation):
Sn
CAS Number:
Molecular Weight:
118.71
EC Number:
MDL number:
UNSPSC Code:
12161600
PubChem Substance ID:
NACRES:
NA.22

Assay

≥99%

form

powder

reaction suitability

core: tin
reagent type: catalyst

resistivity

11 μΩ-cm, 20°C

bp

2270 °C (lit.)

mp

231.9 °C (lit.)

density

7.310 g/mL at 25 °C (lit.)

cation traces

Bi: ≤200 mg/kg
Cu: ≤100 mg/kg
Fe: ≤100 mg/kg
Pb: ≤500 mg/kg
Sb: ≤300 mg/kg

SMILES string

[Sn]

InChI

1S/Sn

InChI key

ATJFFYVFTNAWJD-UHFFFAOYSA-N

Application

Tin has been used as a precursor for the synthesis of nano-tin oxide which can be deposited on aluminum substrate to be used as an urea sensor. It is generally used for the synthesis of Li/Sn alloys and tin-oxide based electrodes for lithium-ion secondary batteries.

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Microstructure and electrochemical properties of a nanometer-scale tin anode for lithium secondary batteries.
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Journal of Power Sources, 136(1), 154-159 (2004)
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Particle size and multiphase effects on cycling stability using tin-based materials.
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Single-layer single-crystalline SnSe nanosheet with four-atomic thickness of ~1.0 nm and lateral size of ~300 nm is presented here by using a one-pot synthetic method. It is found that 1,10-phenanthroline plays an important role in determining the morphology of the
Shiyou Chen et al.
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The kesterite-structured semiconductors Cu2ZnSnS4 and Cu2ZnSnSe4 are drawing considerable attention recently as the active layers in earth-abundant low-cost thin-film solar cells. The additional number of elements in these quaternary compounds, relative to binary and ternary semiconductors, results in increased flexibility

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